一种低功耗带隙基准电压源的设计  

A Design of Low-Power Bandgap Voltage Reference Circuit

作　　者：胡成煜 顾益俊 李富华[1] 

机构地区：[1]苏州大学,江苏苏州215000

出　　处：《电子与封装》2017年第2期13-16,共4页Electronics & Packaging

摘　　要：设计了一种工作在亚阈值区无运放结构的CMOS带隙基准电压电路。通过使用线性区工作的MOS管取代传统电阻,使电路工作在亚阈值区,结合无运放设计,极大地降低了功耗。采用0.35μm CMOS工艺,在室温27℃、工作电压3 V的条件下进行仿真,输出基准电压1.2086 V,偏差在4 m V内,工作电流仅为1.595μA,功耗仅为4.785μW。在-50℃到120℃的温度范围内温度系数为17.3×10-6/℃。该带隙基准电压电路具有低功耗、宽温度范围、面积小等特点。The paper presents a non-operational amplifier bandgap reference circuit based on sub-threshold CMOS. Instead of traditional resistances, the MOSFET works in linear region and thereby greatly reduces consumption. The performance of temperature drift is improved. The circuit is manufactured in 0.35 μm CMOS process and simulated at 27 ℃ and 3 V working voltage. The output reference voltage is 1.2086 V within a deviation of 4 m V; the current is about 1.595 μA; and the power consumption is only about 4.785 μW.And the temperature coefficient is 17.3 ×10^-6/℃ in the range of-50 ℃ to 120 ℃. The bandgap voltage reference circuit is of wide temperature range, low power consumption, and small size.

关 键 词：带隙基准 亚阈值 低功耗 无运放 温度系数 

分 类 号：TN402[电子电信—微电子学与固体电子学]