反应离子刻蚀制备的多晶黑硅损伤去除与钝化性能研究  

Damage-Removal and Passivation of Polycrystalline Black Silicon by Reactive Ion Etching

作　　者：金磊[1] 李玉芳[1] 沈鸿烈[1] 蒋晔[1] 杨汪扬 杨楠楠[1] 郑超凡[1] 

机构地区：[1]南京航空航天大学材料科学与技术学院,江苏省能量转换材料与技术重点实验室,江苏南京210016

出　　处：《光学学报》2017年第2期185-190,共6页Acta Optica Sinica

基　　金：国家自然科学基金(61176062);江苏省前瞻性联合研究项目(BY2016003-09)

摘　　要：结合SiO_2纳米球掩模和反应离子刻蚀技术制备了结构呈周期性排列的多晶黑硅,利用低浓度的NaOH溶液去除由荷能离子撞击所带来的损伤层,优化了多晶黑硅结构。在多晶黑硅上用原子层沉积技术沉积一层Al_2O_3薄膜,并对样品进行快速热退火处理。结果表明,采用低浓度的NaOH溶液可以完全去除损伤层,在保持原有黑硅结构的基础上使表面结构更加光滑;经450℃快速热退火后少子寿命达到29.34μs,表面复合速率为306cm·s-1,在可见光范围内平均反射率降至7.12%。Polycrystalline black silicon with a periodic structure are fabricated by the combination of SiO2 nanospheres mask and reactive ion etching method. The damage layer is removed from energetic ion bombardment by dipping into a diluted NaOH solution, and the polycrystalline black silicon is optimized. Al2O3 thin film is deposited by atomic layer deposition method, and the samples are treated by rapid thermal annealing. Results show that damage layer could be removed completely by dipping into NaOH solution, and the nanostructure is smooth while maintaining the original black silicon structure. A balanced effect combining surface passivation and anti-reflectance are obtained after the rapid thermal annealing at 450 ℃. Minority carrier lifetime and effective surface recombination velocity are 29.34 μs and 306 cm·s-1,respectively. In the visible wavelength range, the average reflectance reduces to 7.12%.

关 键 词：材料 反应离子刻蚀 去损伤 表面钝化 氧化铝 

分 类 号：TB34[一般工业技术—材料科学与工程]