InP基光电探测器材料的MOCVD锌扩散  

Zn Diffusion of InP Based Photodetector Materials by MOCVD

作　　者：张宇[1] 于浩[1] 郝文嘉[1] 车相辉[1] 尹顺正[1] 齐利芳[1] 赵润[1] 陈宏泰[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2017年第4期300-304,共5页Semiconductor Technology

摘　　要：锌(Zn)扩散是制作InP基光电探测器(PD)的重要工艺过程。分析了锌扩散的机制,利用金属有机化学气相沉积(MOCVD)设备对InP基PD及雪崩光电探测器(APD)材料进行了锌扩散,由于MOCVD设备具有精确的温度控制系统,所以该扩散工艺具有简单、均匀性好、重复性好的优点。对于扩散后的样品,采用电化学C-V方法和扫描电子显微镜(SEM)等测试分析手段,研究了退火、扩散温度、扩散源体积流量和反应室压力等主要工艺参数对InP材料扩散速率和载流子浓度的影响,并将该锌扩散工艺应用于InP基光电探测器和雪崩光电探测器的器件制作中,得到了优异的器件性能结果。Zn diffusion is an important technological process of fabricating the InP based photode- tector. The mechanism of Zn diffusion was analyzed, and the InP based PD and the avalanche photode- tector （APD） materials were diffused by the metal organic chemical vapor deposition （MOCVD） device. As the MOCVD device has an accurate temperature control system, this diffusion process has the advantages of simplicity, good uniformity and repeatability. For the diffused samples, the influences of the main technological parameters such as the annealing, diffusion temperature, diffusion source volume flow and chamber pressure on the diffusion rate and carrier concentration in the InP material were studied by test and analysis methods of the electrochemical C-V method and the scanning electron microscope （SEM）. The Zn diffusion process was applied to the fabrication of the InP based photodetectors and the avalanche photodetector devices, achieving excellent device performance results.

关 键 词：锌扩散 金属有机化学气相沉积(MOCVD) INP 光电探测器 扩散速率 

分 类 号：TN305.4[电子电信—物理电子学]