Cr离子注入铜薄膜对氧化物形成特征的影响  

The Effect of Ion Implantation on the Characteristics of Oxide Formation of Copper Thin Films

作　　者：王二敏[1] 王晓震[1] 赵新清[1] 

机构地区：[1]北京航空材料研究院,北京100095

出　　处：《材料工程》2000年第8期39-40,46,共3页Journal of Materials Engineering

摘　　要：采用 X射线衍射和卢瑟福背散射技术 ,研究了 Cr离子注入铜薄膜对氧化物形成及其演变的影响。结果表明 ,离子注入改变了薄膜的氧化行为和氧化物结构。离子注入阻碍 Cu原子的扩散 ,并抑制 Cu2 O向 Cu O转变 ,使得铜薄膜表面的氧化物具有层状结构。探讨了注入前后薄膜表面氧化物形成的机理。WT5BZ]Using X ray diffraction and Rutherford back scattering techniques, a study has been made of the oxidation characteristics of copper thin films by Cr ion implantation It is indicated that the implantation of Cr ions remarkably changes the oxidation behavior and the copper oxide structures Ion implantation suppresses the diffusion of copper atoms during oxidation and then inhibits the change of Cu 2O to CuO The formation mechanism of oxides before and after implantation was discussed

关 键 词：Cr离子 氧化物 形成特征 铜薄膜 离子注入 氧化 铬离子 结构 

分 类 号：TG174.444[金属学及工艺—金属表面处理]