金属缓冲层上生长GaN薄膜的结构、发光性能及其生长机理  

Structure,optical property,and growth mechanism of gaN films grown on metal buffer layer by APCVD

作　　者：梁建[1,2] 赵丹[1,2] 赵君芙[1,2] 马淑芳[1,2] 邵桂雪[1,2] 许并社[1,2] 

机构地区：[1]太原理工大学新材料界面科学与工程省部共建教育部重点实验室,山西太原030024 [2]太原理工大学材料科学与工程学院,山西太原030024

出　　处：《功能材料》2011年第S4期599-603,共5页Journal of Functional Materials

基　　金：山西省回国留学人员重点资助项目(No.2009-03);山西省回国留学人员科研资助项目(No.2008-37)

摘　　要：为了解决硅衬底与GaN之间的晶格失配和热失配问题,实验尝试采用常压化学气相沉积法(APCVD),分别以金属镓(Ga)和氨气(NH3)为镓源和氮源,在加入Al、Au/Al两种金属缓冲层和不加缓冲层的硅衬底上生长氮化镓(GaN)薄膜。采用高分辨X射线衍射仪(HRXRD)、X-ray能谱仪(EDS)、场发射扫描电子显微镜(FESEM)和光致发光能谱(PL)对样品进行了结构、成分、形貌和发光性能分析,结果表明,生成物均为六方纤锌矿结构的GaN多晶薄膜,但其形貌和发光性能各异。在加入金属缓冲层后,GaN薄膜的致密度和结晶性能均提高,而且其生长取向随之发生了显著变化,光强度也有所增强。最后,对在不同缓冲层上GaN薄膜的生长机理进行了初步探讨。In order to decrease the effects of the lattice mismatch(+17%) and thermal mismatch(-54%) between GaN and Si,GaN films have been attempted to deposit on silicon substrates without and with different metal buffer layers by atmospheric pressure chemical vapor deposition(APCVD).In this study,Al and Au/Al metal buffer layers were separately prepared on Si(100) substrate by electron beam evaporation,and GaN films were then grown on these metal buffer layers using Ga and NH3 as precursors.The crystalline phase,structure,composition,morphology,and optical property of each sample were analyzed and compared respectively using high-resolution X-ray diffraction(HRXRD),field emission scanning electron microscope(FESEM),energy dispersive X-ray spectroscopy(EDS),and photoluminescence(PL).The results show that all samples are GaN polycrystalline films with a hexagonal wurtzite structure.The PL spectra of three samples have shown a strong emission peak near band edge and a weak yellow luminescence peak.Applying the metal buffer layer can directly lead to an obvious improvement in the densification,crystallinity,and emission intensity of GaN films,and also result a significant change in its growth orientation.Finally,the possible growth processes of GaN films deposited on silicon substrates with different metal buffer layers are discussed.

关 键 词：GAN 薄膜 金属缓冲层 

分 类 号：TB383.2[一般工业技术—材料科学与工程]