SiC外延炉加热系统的设计  

The Design of the Heating System of Chemical Vapor Deposition for Silicon Carbide Epitaxy

作　　者：陈特超[1] 林伯奇[1] 龙长林[1] 肖慧[1] 胡凡[1] 程文静[1] 丁杰钦 杨一鸣[1] 龚杰洪[1] 

机构地区：[1]中国电子科技集团公司第四十八研究所,湖南长沙410111

出　　处：《电子工业专用设备》2017年第1期4-7,34,共5页Equipment for Electronic Products Manufacturing

基　　金：国家高新技术发展计划(863计划)资助项目(2014AA041401)

摘　　要：碳化硅材料是一种宽禁带半导体材料,其耐高温、耐高压的特性特别适合制作大功率半导体器件。近几年来,随着SiC器件生产工艺技术的突破,碳化硅器件得到了快速的发展,其相关设备也在不断开发并走向成熟。简要介绍了SiC外延生长设备中加热器的设计方法、温度控制以及温度均匀性调节方法,通过实验验证了温度均匀性及控制精度。Silicon carbide is a type of semiconductor with wide band gap. With its high resistance for high temperature and high voltage, silicon carbide is very suitable for high-power devices. In recent years, with several breakthroughs of the process related to silicon carbide devices, silicon carbide devices have been developed in a fast pace and process related equipment have been also developed. This article mainly focuses on the design of heating system of chemical vapor deposition for silicon carbide epitaxy, the temperature control strategies and the uniform heat field control method. Theoretical computational simulation and analysis have been applied for the uniform heat field control and the accuracy of the method, taking the choice of heating sources and the thickness of the graphite support into consideration. Experiments have been also conducted to confirm the theoretical results. Essentially, good performance in temperature stabilization and control accuracy have been achieved.

关 键 词：碳化硅 外延生长 加热器 线圈 温度曲线 

分 类 号：TN305[电子电信—物理电子学]