2~20GHz GaAs超宽带杂谱抑制单片低噪声放大器  

Two Kinds of 2~20GHz GaAs Ultra-wideband Low Noise Amplifier MMICs with Spurious Compression

作　　者：彭龙新[1] 牛超[1] 凌显宝 凌志健 

机构地区：[1]南京电子器件研究所,南京210016

出　　处：《固体电子学研究与进展》2016年第1期12-16 20,共6页Research & Progress of SSE

摘　　要：基于0.15μm GaAs PHEMT低噪声工艺,采用二种不同的电路结构——分布式和负反馈,研制了两种超宽带低噪声放大器芯片,两种芯片都达到了2~20GHz的超宽带要求。两款芯片均使用单电源+5V自偏置供电。分布式低噪声放大器芯片的典型增益为17dB,典型噪声系数为2.5dB,输入驻波≤1.6,输出驻波≤1.9,1dB增益压缩输出功率≥14dBm,电流≤75mA;负反馈低噪声放大器芯片的典型增益≥20dB,典型噪声系数≤3.0dB,输入输出驻波≤2.1,1dB增益压缩输出功率≥14dBm,电流≤60mA。用探索到的杂谱抑制理念,设计的两种放大器在全频带、全温(-55^+125℃)、大小信号输入下均未见到杂波,成功解决了国外同类产品HMC462在低温(-55℃)下存在杂散的严重问题。Based on the 0.15μm GaAs PHEMT low noise process,two kinds of ultra-broadband low noise amplifier MMICs were designed and fabricated using two different topologies-distributed topology and negative feedback topology.The two different structures could both realize the wide bandwidth of 2~20GHz.The distributed LNA provided a typical gain of over 17 dB,typical noise figure of less than 2.5dB,input/output VSWR of less than 1.6/1.9,output power of over 14 dBm at 1dB compression,current of less than 75 mA at single power supply of 5V,while the feedback LNA provided a typical gain of over 20 dB,typical noise figure of less than3.0dB,input/output VSWR of less than 2.1,output power of over 14 dBm at 1dB compression,current of less than 60 mA @ 5V.Spurious didn′t appear in two kinds of LNAs proposed in the paper from 2GHz to 20 GHz and-55℃to+125℃,and the spurious problem appearing in counterpart HMC462at-55℃ was successfully solved.

关 键 词：微波单片集成电路 超宽带 低噪声放大器 赝配高电子迁移率晶体管 分布式结构 负反馈 杂波抑制 

分 类 号：TN722.3[电子电信—电路与系统]