基于GaAs工艺的新型I-Q矢量调制器芯片设计  

Design of a Novel I-Q Vector Modulator Based on GaAs Process

作　　者：沈宏昌[1] 沈亚[1] 潘晓枫[1] 徐波[1] 李思其[1] 曲俊达[1] 韩群飞[1] 

机构地区：[1]南京电子器件研究所,南京210000

出　　处：《固体电子学研究与进展》2016年第2期115-118,共4页Research & Progress of SSE

摘　　要：在传统的单平衡式I-Q矢量调制器的基础上,提出了一种新颖的I-Q矢量调制方法。通过采用180°模拟移相器替代传统的双相调制器和衰减器,从而降低了插入损耗并减小了芯片面积。最终,本文采用0.25μm GaAs PHEMT工艺,设计出了一款K波段单片集成的I-Q矢量调制器。实测结果表明:在21~23GHz频带内,该芯片实现了0到360°的连续变化的相位调制,其幅度调制深度大于20dB,插入损耗小于11.2dB。In this paper,based on the traditional single balanced I-Q vector modulator,a novel I-Q vector modulation method was proposed.The 180°analog phase shifter was used in the proposed method,instead of the biphase modulator and the attenuator,so the insertion loss and the chip size could be reduced.Finally,a K-band monolithic integrated I-Q vector modulator was designed by using 0.25μm GaAs pHEMT process.The measurement results show that the variation of the phase modulation is continuously from 0°to 360°,the depth of the amplitude modulation is larger than 20 dB,and the insertion loss is less than 11.2dB from 21 GHz to 23 GHz.

关 键 词：单平衡 GAAS 模拟移相器 矢量调制器 

分 类 号：TN761[电子电信—电路与系统]