直流反应磁控溅射制备单一相Cu_2O薄膜及光电性能研究  

Photoelectric properties of single phase Cu_2O thin films prepared by direct current reactive magnetron sputtering

作　　者：王进霞[1] 洪瑞金[1,2] 张涛[1] 陶春先[1,2] 张大伟[1,2] 

机构地区：[1]上海理工大学光电信息与计算机工程学院,上海200093 [2]教育部光学仪器与系统工程中心上海市现代光学系统重点实验室,上海200093

出　　处：《功能材料》2017年第4期4096-4099,4104,共5页Journal of Functional Materials

基　　金：国家重点研发计划资助项目(2016YFB1102300);国家自然科学基金资助项目(61378060)

摘　　要：室温下,采用直流反应磁控溅射法制备透明导电氧化亚铜(Cu_2O)薄膜。利用X射线衍射仪(XRD)、原子力显微镜(AFM)、四探针测试仪及拉曼光谱仪分别研究不同沉积时间下制备的Cu_2O薄膜的晶体结构、表面形貌、电阻率及表面增强拉曼散射特性。实验结果表明,沉积时间为3和6min时,获得单一相的透明导电Cu_2O薄膜;随着沉积时间的增加,薄膜由非晶态转变为(111)方向择优生长,薄膜致密且颗粒呈球状,其粗糙度的均方根(RMS)值增大,薄膜电阻率呈下降趋势;以罗丹明B(RhB)为探针分子,表征样品表面增强拉曼活性,通过对比不同样品表面RhB的拉曼光谱,其散射强度随薄膜表面粗糙度的增大而增强。Cuprous oxide （Cu2 O） thin films were fabricated by DC reactive magnetron sputtering at room tem- perature. Effects of deposition time on crystal structure, phase composition, surface morphology, resistivity and surface-enhanced Raman scattering properties of the Cu20 films were characterized by X-ray diffraction （XRD）, atomic force microscopy （AFM）, four-probe tester and Raman spectroscopy, respectively. The results show that the single-phase transparent conductive Cu2 O film is obtained at the deposition time of 3 and 6 min.The phases of Cu2O films vary from amorphous to polycrystalline with the preferred orientation in （111） plane with the deposition time increasing. The surfaces of thin films consist of densely spherical grains and the Root mean square （RMS） roughness increases as the deposition time increasing. The resistivity decreased. With the Rhodamine B （RhB） as the probe molecule, Raman scattered spectrum was detected on the samples. By comparison of different samples, the results demonstrate the Raman signal was enhanced by surface roughness increased.

关 键 词：透明导电薄膜 氧化亚铜 直流反应磁控溅射 沉积时间 电阻率 拉曼光谱 

分 类 号：O47[理学—半导体物理] O484[理学—物理]