X-Band Power Amplifier for Next Generation Networks Based on MESFET  

作　　者：Muhammad Saad Khan Hongxin Zhang Fan Zhang Sulman Shahzad Rahat Ullah Sajid Ali Qasim Ali Arain Manzoor Ahmed 

机构地区：[1]School of Electronic Engineering, Beijing University of Posts and Telecommunications (BUPT), Beijing 100876, China [2]Beijing Key Laboratory of Work Safety Intelligent Monitoring, Beijing University of Posts and Telecommunications, Beijing 100876, china [3]College of Information Science and Electrical Engineering, Zhejiang University, Hangzhou, Zhejiang, 310027,china [4]Electrical Engineering Department, University College of Engineering & Technology, Bahauddin Zakariya University, Multan, Pakistan [5]State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China [6]Department of Coxnputer Science, D.G. Khan Campus. University of Education, Lahore, Pakistan [7]Future lnternet & Communication Lab (FIB), Department of Electronic Engineering, Tsinghua University, Beijing 100084, China

出　　处：《China Communications》2017年第4期11-19,共9页中国通信（英文版）

基　　金：supported by the National Natural Science Foundation of China (Grant no.61571063, 61472357, 61501100)

摘　　要：Advanced wireless standards of communication like 3GPP and LTE are becoming more and more efficient and with this evolution of communication systems mobile equipment is also become smaller and smaller. Power amplifier designing has become a very crucial task in this era where efficiency and size are the main concern of any designer. In this paper we have design and analyzed X-band Class E Metal-semiconductor field effect transistor(MESFET) based Power Amplifier. This device targets the devices which use OFDM technique to improve their spectral efficiency for the next generation communication systems. Microstrip lines are used to achieve small size for our design instead of lumped components. Load Pull measurements are used to get MESFET input and output impedances optimum values. For linear and non linear operation small signal mathematical model of the design is used. To reduce thermal losses FR4 substrate is used to increase PA efficiency. Our designs shows small values of input and output return loss of about-22.3d B and-23.716 d B achieving a high gain of about25.6 d B respectively, with PAE of about 30 % having stability factor greater than 1 and 21.894 d Bm of output power.Advanced wireless standards of communication like 3GPP and LTE are becoming more and more efficient and with this evolution of communication systems mobile equipment is also become smaller and smaller. Power amplifier designing has become a very crucial task in this era where efficiency and size are the main concern of any designer. In this paper we have design and analyzed X-band Class E Metal-semiconductor field effect transistor（MESFET） based Power Amplifier. This device targets the devices which use OFDM technique to improve their spectral efficiency for the next generation communication systems. Microstrip lines are used to achieve small size for our design instead of lumped components. Load Pull measurements are used to get MESFET input and output impedances optimum values. For linear and non linear operation small signal mathematical model of the design is used. To reduce thermal losses FR4 substrate is used to increase PA efficiency. Our designs shows small values of input and output return loss of about-22.3d B and-23.716 d B achieving a high gain of about25.6 d B respectively, with PAE of about 30 % having stability factor greater than 1 and 21.894 d Bm of output power.

关 键 词：MESFET X-BAND power amplifier advance design system PAE LTE 

分 类 号：TN722.75[电子电信—电路与系统]