毫米波GaN HEMT器件大信号模型  

Large Signal Equivalent Circuit Modeling of Millimeter Wave GaN HEMT

作　　者：陆海燕[1] 周建军[1] 孔月婵[1] 陈堂胜[1] 

机构地区：[1]南京电子器件研究所微波毫米波单片集成和模块电路重点实验室,南京210016

出　　处：《固体电子学研究与进展》2017年第2期73-76,共4页Research & Progress of SSE

基　　金：国家自然科学基金资助项目(61474101;61504125);国家高技术研究发展计划(863计划)资助项目(2015AA016802;2015AA033305)

摘　　要：介绍了一种毫米波GaN基HEMT器件大信号等效电路模型。该模型采用SDD的建模方法。提出了I-V及C-V表达式,完成了直流及S参数的拟合,并分析了拟合结果。与18GHz的在片loadpull测试结果比较,模型仿真结果显示输出功率及效率与实测数据基本一致。A novel large signal equivalent circuit modeling of GaN HEMT has been presented. The large signal model was constructed by using the SDD form. I-V and C-V expressions were proposed and used to complete DC and S-parameters fittings. The results were analyzed by contrasting to the measurement results of the GaN HEMT. Single tone on-wafer load-pull measurement at 18 GHz was carried out for verification purpose. The results show that good agreements on output power and efficiency have been achieved between simulations and measurements.

关 键 词：符号定义器件 GAN高电子迁移率晶体管 大信号模型 

分 类 号：TN325[电子电信—物理电子学] TN45