退火对Ga_2O_3薄膜特性的影响  

Effect of Annealing on Ga_2O_3 Film

作　　者：马征征[1] 董鑫[1] 庄仕伟 许恒[1] 胡大强[1] 

机构地区：[1]吉林大学电子科学与工程学院,吉林长春130012

出　　处：《发光学报》2017年第5期606-610,共5页Chinese Journal of Luminescence

基　　金：国家自然科学基金(61106003;61274023);吉林省科技攻关计划(20170204045GX)资助项目~~

摘　　要：采用金属有机物化学气相沉积法在c面蓝宝石衬底上生长了高质量的β-Ga_2O_3薄膜,并将样品分别在真空、氧气、氮气氛围下退火30 min,研究了各类退火工艺对Ga_2O_3薄膜特性的影响,对退火所得的薄膜进行了X射线衍射、光致发光谱、紫外透射谱和原子力显微镜扫描的研究。结果表明,各类退火工艺均能够优化薄膜的晶体质量和表面形貌,同时有效改善了薄膜的光学性质。其中,氧气退火后的样品在可见光波段透射率高达83%,且吸收边更加陡峭;表面粗糙度降至0.564 nm,其表面更为平整。这些结果说明氧气退火对晶体质量的提高最为显著。氮气、真空退火的样品在光致发光谱中出现365 nm的发光峰,这是大量氧空位的存在导致的。High-quality Ga2O3 films were grown on the c-plane sapphire substrates by metal organic chemical vapor deposition and annealed in the different atmospheres consisting of vacuum, oxygen, nitrogen for 30 min, respectively. The effects of annealing on crystal structure and optical properties of β-Ga2O3 film were researched. The results show that all anneal methods can optimize the crystal structure and optical properties of β-Ga2O3 films. Especially, the transmittance and surface rough- ness of the film annealed in the oxygen reaches 83% and 0.564 nm separately compared with other annealed films, and its absorbtion edge gets sharper. It reveals that the oxygen anneal has more im- portant effect on the improvement of the crystal quality. The films annealed in nitrogen and vacuum both exhibit an clear emission peak at 365 nm in the PL spectra.

关 键 词：氧化镓 退火 蓝宝石衬底 金属有机物化学气相沉积法 

分 类 号：TN383[电子电信—物理电子学]