化学气相沉积法硅薄膜的制备及其性能  

Preparation and properties of silicon films by CVD

作　　者：孙家祥[1] 徐同宽[1] 刘彦军[1] 

机构地区：[1]大连工业大学轻工与化学工程学院,辽宁大连116034

出　　处：《大连工业大学学报》2017年第2期106-108,共3页Journal of Dalian Polytechnic University

摘　　要：运用化学气相沉积技术在不锈钢表面沉积了一层致密的硅薄膜,研究了沉积温度及硅烷气体压力对硅薄膜性能的影响。对沉积的硅薄膜进行了EDS能谱分析,通过SEM扫描电镜对硅薄膜微观形貌进行表征,并对沉积硅薄膜的不锈钢样品进行电化学分析,研究了硅薄膜对不锈钢抗腐蚀性能的影响。结果表明,化学气相沉积温度为390℃、硅烷气压为10kPa时金属表面形成的硅薄膜防腐性能最佳。A layer of compact silicon film was prepared on the surface of stainless steel using chemical vapor deposition technology. The effects of reaction temperature and Sill4 pressure on the chemical properties of silicon film were also studied. An energy-dispersive spectroscopy of the silicon film was analyzed and the microscopic morphology of silicon film was characterized by SEM. The effect of silicon film on anti-corrosive properties of stainless steel was explored by the electrochemical analysis of the stainless steel coated with silicon film. The results showed that the corrosion resistance of silicon film was best when the temperature was 390 ℃ and the pressure of the SiH~ was 10 kPa.

关 键 词：硅薄膜 防腐性 化学气相沉积 

分 类 号：TB43[一般工业技术]