InGaAsP/InP激光器结构与量子阱数的优化  

Optimizing analysis the structure and the number of quantum wells of InGaAsP/InP Multi-Quantum-Well laser

作　　者：赵霞飞[1] 贾华宇[1] 李灯熬[1] 罗飚 刘应军 马臖 

机构地区：[1]太原理工大学物理与光电工程学院,山西晋中030600 [2]武汉电信器件有限公司,武汉430074

出　　处：《激光杂志》2017年第5期6-10,共5页Laser Journal

基　　金：国家863计划课题(2015AA016901);山西省自然科学基金项目(2015011050)

摘　　要：为了优化应用于光纤通讯和CATV系统需求的高性能的量子阱激光器,对波长在1.55μm左右的InGaAsP/InP量子阱激光器的有源区结构和量子阱数目进行了优化分析。本文针对In(1-x)GaxAsyP(1-y)量子阱激光器,提供了一种有源区结构优化方法。在势阱层组分为In_(0.76)Ga_(0.24)As_(0.81)P_(0.19),厚度为5nm;势垒层组分为In_(0.751)Ga_(0.249)As_(0.539)P_(0.461),厚度为10nm时,激光器的各项性能参数达到最优。在此基础上,研究量子阱个数对激光器平均载流子浓度、输出光功率和阈值电流的影响。采用ALDS软件进行仿真,对比量子阱个数分别为5、6、7、8、9、10、11时,激光器的各项输出参数。对不同量子阱个数的激光器,分别进行结构和材料求解,并进行阈值、稳态、分布和光谱、小信号以及噪声分析。仿真结果表明,当量子阱个数为8时,在偏置电流为150mA,激光器温度为300K情况下,激光器的平均载流子浓度达到最大值0.745×1018/cm^3,输出光功率达到最大值28.8m A,阈值电流达到最低值15.7mA,阈值电流密度达到最低值0.8KA/cm^2,边模抑制比达到最高值22.13dB,驰豫振荡频率达到最高值13.8GHz,P-I曲线及斜率效率达到最优值。In order to optimize high-performance multi-quantum-well laser applied for optical fiber communica- tion and CATV systems demand, the structure of the quantum well and the number of quantum wells in active region of wavelength around 1.55 μm have been analyzed. This paper provides an active region structural optimization method for In（1-x） GaxAsyP（1-y） quantum well lasers. The performance parameters of the laser to achieve the optimal when the well layer component is In0.76 Ga0.24 As0. 8l P0. 19, thickness is 5nm, and the barrier layer components is In0.751 Ga0.249 Aso. 539 P0.461 , thickness is 10nm. On this basis, the influence of quantum well number on the average carrier concentration, the output optical power and threshold current were discussed. Compare the output parameters of the laser with the dif- ferent well number of 5,6,7,8,9,10,11 by ALDS simulation software, and solve the structure and material, carry out the threshold analysis, steady state analysis, distribution spectrum analysis, small signal analysis and noise analysis of different well number lasers. The simulation results show that if the bias current is 150 mA and the temperature is 300K, when the number of quantum wells is 8, the average carrier concentration reaches a maximum value 0. 745 ×10^18/cm3 , the output optical power reaches the maximum value 28.8 mA, the threshold current reaches the minimum value 15.7mA, the threshold current den- sity reaches the minimum value 0. 8KA/cm2, the side mode suppression ratio reaches the maximum value 22. 13dB, relaxation oscillation frequency reaches themaximum value 13.8GHz, P-I curve slope efficiency reach the optimal value.

关 键 词：多量子阱激光器 INGAASP/INP 有源区结构 量子阱个数 

分 类 号：TN248.4[电子电信—物理电子学]