电子在掺杂GaAs/GaAlAs斐波那契量子阱中波函数和能量性质  

The electronic energy properties of the doped GaAs/GaAlAs Fibonacci quantum wells structure

作　　者：骆敏[1] 程子恒 包建阳 朱克杰 

机构地区：[1]南京林业大学理学院,南京210037 [2]肥东圣泉中学,肥东231600

出　　处：《四川大学学报（自然科学版）》2017年第3期557-560,共4页Journal of Sichuan University(Natural Science Edition)

基　　金：南京林业大学2015年度大学生创新训练计划项目(2015sjcx152)

摘　　要：本文利用转移矩阵和边界条件精确计算一维定态薛定谔方程,推导出一维斐波那契量子阱结构中电子波函数的计算条件.考虑了在势阱中掺杂的情况,并且认为势阱中掺杂仅仅只是改变势阱的宽度.在半导体材料的参数范围内,进一步研究了势阱宽度对一维掺杂斐波那契量子阱结构的电子能量本征值的影响.The eigen-wavefunction of the Fib0nacci quantum well structure is presented based on an exact solution of the SchrOdinger equation by using the transfer matrix approach and the boundary conditions. We think that in the case of one of the potential well containing impurities for the Fihonacei quantum wells structure, the impurities merely change the well width. For a selected range of parameters of semiconductor materials, the behavior of eigenenergy has been studied for the doped Fibonacci quantum well structure by changing the well width in the one of the potential well containing impurities.

关 键 词：斐波那契量子阱结构 本征波函数 本征能量 

分 类 号：O413.1[理学—理论物理]