基于硅硅键合技术的高精度压力传感器的研究  

Study of High-precision Pressure Sensor Based on Silicon-silicon Bonding Technology

作　　者：李颖[1] 张治国[1] 郑东明[1] 梁峭[1] 张哲[1] 刘剑[1] 祝永峰[1] 

机构地区：[1]沈阳仪表科学研究院有限公司,辽宁沈阳110043

出　　处：《仪表技术与传感器》2017年第5期10-13,18,共5页Instrument Technique and Sensor

基　　金：国家高技术研究发展计划(863计划)项目(2014AA042001)

摘　　要：硅压阻压力传感器核心部件一般是由单晶硅和玻璃组成的微结构,由于单晶硅和玻璃的材料特性存在差异,在制造过程中会引入封装应力对传感器的性能产生不利影响。采用硅硅键合技术制造压力传感器核心部件的微结构,以同质材料替代异质材料实现器件的封装,可有效减少封装应力,提升压力传感器的性能。文中通过结合硅压阻压力敏感芯片的制造工艺和硅硅键合工艺,实现了敏感芯片与硅衬底间的硅硅键合,键合强度达到体硅强度。研制的差压型压力敏感芯片装配成传感器的零点温度漂移下降60%,静压误差下降约1个数量级。It had important application especially in the field of microstructure of the chip in high precision pressure sensor. The core component of silicon piezoresistive pressure sensor was generally composed of monocrystalline silicon and glass.Due to the differences in properties between monocrystalline silicon and glass,it always introduced packaging stress during the manufacturing processing,which can subsequently affect the performance of the sensor.In this study,the mierostrncture of the core component of the pressure sensor was made based upon Si-Si direct bonding technology.The encapsulation of the device can be carried out by using homogeneous materials as the alternatives for the replacement of heterogeneous materials.h effectively reduced the packing stress and consequently improved the performance of the pressure sensor.The Si-Si direct bonding between the sensitive chip and the silicon substrate was conducted by Combining the manufacturing processing of the silicon piezoresistive pressure sensitive chip and the silicon-silicon bonding technology.The bonding strength was found as high as that of the silicon matrix.The zero temperature drift of the sensor assembled using the pressure sensitive chip developed here in is reduced by 60%, and the static pressure error is reduced by an order of magnitude.

关 键 词：高精度 传感器 硅硅键合 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置]