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机构地区:[1]华中光电技术研究所-武汉光电国家实验室,湖北武汉430223
出 处:《光学与光电技术》2017年第3期61-64,73,共5页Optics & Optoelectronic Technology
基 金:国家重大科学仪器设备开发专项(2013YQ290489)资助项目
摘 要:设计了45°入射反中波透长波分束膜系,并进行了误差仿真分析。选用"Ge+ZnS"和"ZnS+YF3"两组高、低折射率材料,采用离子辅助电子束蒸发技术,经过大量的镀制实验与工艺改进,解决了薄膜应力累积、不牢固、波长易偏移等问题,获得了45°入射中波红外3.7~4.8μm波段反射率R≥98%,长波红外7.7~10.3μm波段透过率T≥95%、光学性能良好的反中波透长波红外分束膜。镀膜样品一次性通过了GJB 2485-1995规定的高低温及附着力试验。试验结果表明,膜层致密性和附着力良好。The 45° incident HR-MWIR/AR-LWIR beamspletter is designed and the error simulation analysis is carried out. Two groups of high-low refractive index materials such as "Oe + ZnS" and "ZnS + YF3" were selected, and IBAD tech- nique was used. The beamspliter (R≥98% on 3. 7--4. 8 μm, T≥95% on 7. 7--10. 3 μm) was manufactured after a great deal of experiment. The problem of stress accumulation, poor adhesion and wavelength shift were solved. The coated sam- ples were passed through the thermocycling and adhesion test specified by G-JB 2485-1995 at one time. The test results show that the physical performance of the coating sample was excellent.
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