基于CNFET的高性能三值SRAM-PUF电路设计  

High Performance Ternary SRAM-PUF Circuit Based on CNFET

作　　者：汪鹏君[1] 龚道辉 张会红[1] 康耀鹏[1] WANG Peng-jun GONG Dao-hui ZHANG Hui-hong KANG Yao-peng(Institute of Circuits and Systems, Ningbo University, Ningbo, Zhejiang 315211, China)

机构地区：[1]宁波大学电路与系统研究所,浙江宁波315211

出　　处：《电子学报》2017年第5期1090-1095,共6页Acta Electronica Sinica

基　　金：国家自然科学基金(No.61474068;No.61234002);浙江省公益性技术应用研究计划项目(No.2016C31078);浙江省自然科学基金(No.LQ14F040001);宁波市自然科学基金(No.2015A610107)

摘　　要：通过对碳纳米管场效应晶体管(Carbon Nanotube Field Effect Transistor,CNFET)和物理不可克隆函(Physical Unclonable Functions,PUF)电路的研究,提出一种高性能三值SRAM-PUF电路结构.该电路结构首先利用交叉耦合三值反相器产生随机电流,并对其电流进行失配分析;然后结合三值SRAM单元的电流竞争得到随机的、不可克隆的三值输出信号"0"、"1"和"2".在32nm CNFET标准模型库下,采用HSPICE对所设计的三值SRAM-PUF电路进行Monte Carlo仿真,分析其随机性、唯一性等性能.模拟结果表明所设计的三值SRAM-PUF电路归一化随机性偏差和唯一性偏差均为0.03%,且与传统二值CMOS设计的PUF电路相比工作速度提高33%,激励响应对数量为原来的(1.5)n倍.By researching the Carbon Nanotube Field Effect Transistor（CNFET） and the Physical Unclonable Func- tions（PUF） circuit, a structure of high-performance ternary SRAM-PUF circuit is proposed. In this circuit structure, the cross-coupling ternary inverters generate random current,which is analyzed according to the mismatch feature. After competing the random current of ternary SRAM,it produces three-valued signal,such as ＂0＂ ,＂1＂ and ＂2＂. Under Stanford University 32nm CNFET standard model,HSPICE is nsed for Monte Carlo simulation to analysis the randomness, uniqueness and other features. And simulation results show that the randomness variation and uniqueness can be achieved at 0.03% after normalization. Comparing with conventional binary CMOS PUF circuit, the proposed circuit improves the speed by 33 %, and increases the number of challenge-response by（ 1.5 ）^n times.

关 键 词：碳纳米管场效应晶体管 三值逻辑 SRAM-PUF 随机性 唯一性 

分 类 号：TP331[自动化与计算机技术—计算机系统结构]