硅基Ⅲ-Ⅴ族纳米线及其若干半导体器件  

Silicon-Based Ⅲ-Ⅴ Nanowires and Several Semiconductor Devices

作　　者：陶桂龙 许高博[1,2] 徐秋霞[1,2] 

机构地区：[1]中国科学院微电子研究所微电子器件与集成技术重点实验室,北京100029 [2]中国科学院大学,北京100049

出　　处：《半导体技术》2017年第6期411-420,共10页Semiconductor Technology

基　　金：中国科学院微电子器件与集成技术重点实验室开放课题支持项目

摘　　要：综述了硅基Ⅲ-Ⅴ族纳米线与异质结制备技术的研究进展。针对基于Ⅲ-Ⅴ族纳米线的半导体器件,重点介绍了硅基Ⅲ-Ⅴ族纳米线场效应晶体管的研究现状,详细介绍了硅基Ⅲ-Ⅴ族纳米线场效应晶体管和隧穿场效应晶体管的制备流程、工艺技术和器件的电学性能,并对影响器件电学性能的因素进行了分析。概括介绍了硅基Ⅲ-Ⅴ族纳米线激光器和硅基Ⅲ-Ⅴ族纳米线太阳电池的研究成果,基于硅衬底的Ⅲ-Ⅴ族纳米线太阳电池为低成本、高效能的太阳电池领域开辟了新途径。研究结果表明,采用硅基Ⅲ-Ⅴ族纳米线制备的场效应晶体管、激光器及太阳电池等半导体器件相对于Si,Ge等传统半导体材料制备的器件有着巨大的优势,在未来集成电路技术中具有越来越大的影响力。The research progress in preparation techniques of silicon-based Ⅲ-Ⅴ nanowires and heterojunctions are reviewed. For the Ⅲ-Ⅴ nanowires-based semiconductor devices, the research status of the silicon-based Ⅲ-Ⅴ nanowire field-effect transistors is mainly introduced. Then, the preparation process, the process technology and the electrical properties of the silicon-based Ⅲ-Ⅴnanowire field- effect transistors and the tunneling field-effect transistors are introduced in detail, and the factors which affect the electrical performance of the device are analyzed. At the same time, the research results of silicon-based Ⅲ-Ⅴ nanowire lasers and solar cells are also generally introduced, and the solar cells which based on silicon substrates have opened up a new way to the low-cost and high-performance solar cells. The research results show that the silicon-based field effect transistors, lasers and solar cells made by Ⅲ-Ⅴ nanowires have some great advantages compared with those made by traditional semiconductor materials such as Si and Ge, and they will have an increasing influence on the integrated circuit technology in the future.

关 键 词：Ⅲ-Ⅴ族纳米线 异质结 场效应晶体管 激光器 太阳电池 

分 类 号：TN304.23[电子电信—物理电子学]