SOI基3C-SiC薄膜的光谱表征  

Spectral Characterization of 3C-SiC Film Grown on SOI Substrate

作　　者：王飞[1] 杨治美[1] 马瑶[1] 龚敏[1] 

机构地区：[1]四川大学物理科学与技术学院,微电子技术重点实验室,成都610064

出　　处：《光散射学报》2017年第2期187-190,共4页The Journal of Light Scattering

基　　金：四川大学青年教师科研启动基金(2010SCU11089)

摘　　要：本文探索在SOI基片上通过顶层Si直接与碳源反应,反向外延生长3C-SiC薄膜的工艺条件和技术。采用LPCVD技术,以CH4和H2混合气体为反应源,在SOI衬底上生长3C-SiC薄膜。采用X射线衍射分析仪、场发射扫描电子显微镜和傅里叶红外光谱来研究样品的结构和性质;并研究反应前、后样品电压-电容特性的变化。研究结果表明,通过反向外延的方法,能够在SOI基片反向外延生长得到3C-SiC薄膜,但目前的工艺条件有待进一步的改善。This paper is to explore process conditions and technology of the reverse epitaxial growth of 3C-SiC thin film through the reaction between the top silicon of the substrate and carbon source. 3C-SiC film was grown on SOI substrate by Low Pressure Chemical Vapor Deposition（LPCVD） with CH4 and H2 gas mixture as reaction sources. Using various techniques,including X-ray diffraction（XRD）,scanning electron microscope （SEM）and Fourier transform infrared（FTIR） reflectance to study the structure, properties and voltage capaci-tance characteristics of SOI and 3C-SiCOI samples, it＇ s found out that 3C-SiC film can be obtained through re-verse epitaxial growth method and the current process conditions need to be further improved.

关 键 词：立方碳化硅 SOI SICOI 碳化 反向外延 

分 类 号：TN304.054[电子电信—物理电子学]