克服低击穿的硅平面技术  

The Silicon Plane Technique for Overcoming Low-breakdown

作　　者：曹一江[1] 刘振茂[2] 

机构地区：[1]哈尔滨理工大学应用科学学院,黑龙江哈尔滨150080 [2]哈尔滨工业大学航天学院,黑龙江哈尔滨150001

出　　处：《哈尔滨理工大学学报》2002年第4期96-97,100,共3页Journal of Harbin University of Science and Technology

摘　　要：为提高硅平面大功率管的成品率和可靠性,提出了一种刻蚀槽和低温钝化相结合的克服低击穿的硅平面枝术.采用该技术可消除绝大多数平面晶体管管芯的低击穿和穿通点,从而大幅度提高管芯、特别是大功率管管芯的合格率和高档品率.由于应用该技术可消除低击穿点及杂质淀积和缺陷集中区而使器件的固有可靠性得到提高.A Silicon plane technique with etching groove and low temperature passivation is proposed to overcome low-breakdown for increasing the finished product rate and reliability of the plane powerful tube. By use of the method, the low-breakdown and breakover position of great majority plane transistor core can be eliminated to increase the qualification rate of the tube core , especially the powerful transistor. At the same time, the inherent reliability of the component is improved by this technique.

关 键 词：硅平面技术 低击穿 刻蚀沟槽 低温钝化 硅平面大功率管 击穿电压 

分 类 号：TN11[电子电信—物理电子学] TN305