6H-SiC衬底上AlGaN基垂直结构紫外LED的制备  

Fabrication of Vertical Structure Ultraviolet LED on 6H-SiC Substrate

作　　者：刘明哲[1] 李鹏翀[1] 邓高强[1] 张源涛[1] 张宝林[1] 

机构地区：[1]吉林大学电子科学与工程学院集成光电子学国家重点联合实验室,吉林长春130012

出　　处：《发光学报》2017年第6期753-759,共7页Chinese Journal of Luminescence

基　　金：国家重点研发计划(2016YFB0400103);吉林省科技发展计划(20130204032GX;20150519004JH;20160101309JC);教育部新世纪人才计划(NCET13-0254)资助项目~~

摘　　要：利用金属有机物化学气相沉积方法,在n型6H-SiC衬底上制备了15对Si掺杂Al_(0.19)Ga_(0.81)N/Al_(0.37)Ga_(0.63)N DBR,并采用低温AlN缓冲层有效抑制了DBR结构中裂纹的产生,得到了表面均方根粗糙度仅为0.4 nm且导电性能良好的n型DBR,其在369 nm处峰值反射率为68%,阻带宽度为10 nm。在获得导电DBR的基础上,进一步在n型6H-SiC衬底上构建了有、无DBR的垂直结构紫外LED。对比两者电致发光光谱,发现DBR结构的引入有效增强了LED紫外发光强度。Silicon-doped Al0.19 Ga0.81 N/A10.37 Ga0.63 N DBRs were grown on n-type 6H-SiC substrates by metal organic chemical vapor deposition（MOCVD）. To suppress the generation of cracks, a low- temperature A1N pre-deposition layer on 6H-SiC（O001 ） substrate was used as buffer. A smooth-surface 15-pair electrically conducting DBR with a reflectance of 68% at 369 nm was obtained. The stop-band bandwidth and RMS value of DBR are 10 nm and 0.4 nm, respectively. Furthermore, the vertical structure UV LEDs with and without n-DBR on 6H-SiC substrate were fabricated. By compa- ring EL spectra, it is shown that the introduction of DBR structure can effectively improve the UV emission.

关 键 词：ALGAN 紫外发光二极管 分布式布拉格反射镜 金属有机物化学气相沉积 垂直结构 

分 类 号：TN383[电子电信—物理电子学] TH691.9[机械工程—机械制造及自动化]