高温化学气相沉积法制备致密碳化钽涂层  

Preparation of high-density tantalum carbide coating by high-temperature chemical vapor deposition

作　　者：张丽[1] 齐海涛[1] 徐永宽[1] 王利杰[1] 史月增[1] 刘金鑫[1] 

机构地区：[1]中国电子科技集团公司第四十六研究所,天津300220

出　　处：《功能材料》2017年第6期6183-6186,6192,共5页Journal of Functional Materials

摘　　要：采用高温化学气相沉积法(CVD)在高纯高密石墨基片的表面沉积了碳化钽(TaC)涂层。通过研究气化温度、气体流量及沉积温度对TaC涂层表面质量的影响,确定了高温CVD法制备TaC涂层的工艺参数,最终获得高致密度的TaC涂层。Tantalum carbide（TaC）coating was prepared on high-purity,high-density graphite by high-temperature chemical vapor deposition（CVD）.The effects of gasification temperatures,flow rates and deposition temperatures on the surface qualities of TaC coating were investigated.And then,the technical conditions of TaC coating prepared by CVD method were confirmed.Finally,TaC coatings with high densities were obtained.

关 键 词：高温CVD TAC涂层 工艺条件 

分 类 号：TB34[一般工业技术—材料科学与工程]