MMVCX光伏型HgCdTe中波探测器暗电流温度特性  

Parameters extraction from the dark current characteristics of mid-wavelength HgCdTe photodiode after annealing

作　　者：王鹏[1] 何家乐[2] 许娇[2] 吴明在[1] 叶振华[2] 丁瑞军[2] 何力[2] 

机构地区：[1]安徽大学物理与材料科学学院,安徽合肥230601 [2]中国科学院上海技术物理研究所红外物理国家重点实验室,上海200083

出　　处：《红外与毫米波学报》2017年第3期289-294,共6页Journal of Infrared and Millimeter Waves

基　　金：国家自然科学基金(11374013;51672001)~~

摘　　要：研究了光伏型HgCdTe中波探测器的暗电流与烘烤时间的关系特性.编写了一种适用于n-on-p型的中波HgCdTe红外探测器的解析拟合程序.结合暗电流的主导机制有扩散机制、产生复合机制、带间直接隧穿机制和陷阱辅助隧穿机制.通过对样品不同烘烤时间的R-V曲线的解析拟合,得到了它们的暗电流成分,提取了6个特征参数.通过对比不同烘烤时间特征参数的变化,分析了烘烤对器件的影响.In this paper, we studied the relationship between dark current and baking time of mid-wave- length HgCdTe infrared photovoltaic detector. A simultaneous-mode nonlinear fitting program for n-on- p mid-wavelength HgCdTe infrared detector is reported. The curve-fitting model includes the diffusion, generation-recombination, band-to-band tunneling and trap-assisted tunneling current as dark current mechanisms. The dark current components and six characteristic parameters were obtained from the fit- ting of resistance-voltage（R-V） curves measured before and at different annealing time. The effects of annealing on the performance of the photodiodes were analyzed by comparing the characteristic parame- ters of devices at different annealing time.

关 键 词：HGCDTE 光伏探测器 暗电流 非线性同时拟合模型 烘烤 

分 类 号：O472[理学—半导体物理]