基于Ar等离子体表面激活的Ni-Si晶圆键合工艺研究  

Study on Ni-Si Wafer Bonding Process Based on Ar Plasma Surface Activation

作　　者：许维[1,2] 王盛凯[1,2] 刘洪刚[1,2] 

机构地区：[1]中国科学院微电子研究所微电子器件与集成技术重点实验室,北京100029 [2]中国科学院微电子研究所高频高压器件与集成研发中心,北京100029

出　　处：《稀有金属与硬质合金》2017年第3期56-58,70,共4页Rare Metals and Cemented Carbides

基　　金：国家科技重大专项(2011ZX02708-003)

摘　　要：利用Ar等离子体对晶圆表面进行激活处理,随后进行Ni-Si晶圆键合。研究了等离子体表面激活过程中的气体流量和反应离子刻蚀功率对晶圆键合效果的影响,并利用超声扫描显微镜图片来评估晶圆键合的质量。结果表明,等离子体表面激活处理利于得到气泡和空洞数目较少的键合界面,从而有效提升晶圆键合的质量。Wafer surface was activated with Ar plasma, and then Ni-Si wafer bonding was carried out. The effects of gas flow and reactive ion etching power during surface activation on wafer bonding were investigated. The images of scanning acoustic microscopy were applied for assessing the quality of wafer bonding. The results show that holes and bubbles on the bonding interface can be reduced by surface plasma activation to efficiently improve the quality of wafer bonding.

关 键 词：晶圆键合 化学反应键合 Ni-Si键合 表面激活 Ar等离子体 

分 类 号：TN305[电子电信—物理电子学]