二氧化硅纳米球对硼酸源扩散形成p＋硅层性能的影响  

Influence of SiO_2 Nanosphere on the Performance of p^+ Layer Formed by B Diffusion from Boric Acid Solution

作　　者：杨楠楠[1] 沈鸿烈[1] 蒋晔[1] 金磊[1] 李金泽[1] 吴文文[1] 余双龙 杨艳[1] 

机构地区：[1]南京航空航天大学材料科学与技术学院,江苏省能量转换材料与技术重点实验室,南京210016

出　　处：《材料导报》2017年第12期11-14,共4页Materials Reports

基　　金：国家自然科学基金(61176062);江苏省前瞻性联合研究项目(BY2016003-09);江苏高校优势学科建设工程项目

摘　　要：为了提高B扩散掺杂层的性能,提出了用含有二氧化硅纳米球的硼酸溶液作为硼源对硅片进行扩散的方法。采用扫描电子显微镜、四探针和少子寿命测试等技术研究了SiO_2纳米球对硼酸源扩散形成p^+硅层性能的影响。综合分析发现,与未添加SiO_2纳米球相比,扩散后生成的富硼层厚度明显减小,由130nm降低到15nm;同时,扩散的均匀性由88.17%提高到了96.79%。此外,添加SiO_2纳米球进行扩散后p-n结深有所减小,少数载流子寿命明显提高。研究结果表明,SiO_2纳米球可以显著提高液态硼源扩散掺杂形成p^+硅层的性能。In order to improve the quality of B doped layer by diffusion, a novel boron source mixed with SiO2 nanosphere was introduced. Scanning electronic microscopy, four probe method and minority carrier lifetime measurement were adopted to study the influence of SiO2 nanosphere on the performance of p＋ layer formed by B diffusion from boric acid solution. It was found that the thickness of boron rich layer （BRL） decreased from 130 nm to 15 nm compared with that produced without addition of SiOz nano- sphere. At the same time, the uniformity of diffusion increased from 88. 17% to 96. 79%. In addition, junction depth decreased slightly and minority carrier lifetime in the samples increased apparently after using mixed boric acid solution with SiO2 nanosphere. All the results above indicated that SiO2 nanosphere could evidently enhance the property of the p＋ layer formed by liquid B source diffusion from boric acid solution.

关 键 词：硼扩散 SiO2纳米球 富硼层 均匀性 少子寿命 

分 类 号：TB34[一般工业技术—材料科学与工程]