多层铜布线CMP后BTA去除和铜表面腐蚀抑制  

Benzotriazole Removal and Inhibition of Cu Surface Corrosion on Multilayer Copper Wirings After CMP

作　　者：唐继英[1,2,3] 刘玉岭[1,2] 王辰伟[1,2] 洪姣[1,2] Tang Jiying Liu Yuling Wang Chenwei Hong Jiao(School of Electronic Information Engineering, Hebei University of Technology, Tianjin 300130, China Tianjin Key Laboratory of Electronic Materials and Devices, Tianjin 300130, China Tianjin Metallurgical Vocation-Technology Institute, Tianjin 300400, China)

机构地区：[1]河北工业大学电子信息工程学院,天津300130 [2]天津市电子材料与器件重点实验室,天津300130 [3]天津冶金职业技术学院,天津300400

出　　处：《微纳电子技术》2017年第8期553-557,564,共6页Micronanoelectronic Technology

基　　金：国家中长期科技发展规划02科技重大专项资助项目(2016ZX02301003-004-007);国家自然科学基金资助项目(61504037);河北省教育厅资助科研项目(QN2014208);河北省自然科学基金资助项目(E2013202247);河北省自然科学基金青年基金资助项目(F2015202267);河北工业大学优秀青年科技创新基金资助项目(2015007)

摘　　要：有机残余(主要是苯并三氮唑(BTA))和铜表面腐蚀是多层铜布线化学机械抛光(CMP)后晶圆缺陷中的两个重要问题,针对BTA去除和铜表面腐蚀抑制提出了一种新的碱性清洗剂。该清洗剂主要由FA/O螯合剂和FA/O表面活性剂组成。FA/O螯合剂对于去除BTA起主要作用,FA/O表面活性剂不仅能抑制腐蚀而且促进了BTA的去除。通过接触角测量、扫描电镜(SEM)、金相显微镜、静态腐蚀速率(SER)等实验及线上测试研究了该清洗剂的性能,结果表明清洗剂能有效去除BTA且在抑制铜表面腐蚀方面效果明显,有效解决了极大规模集成电路(GLSI)多层铜布线CMP后清洗中的多项技术难题。Organic residual（mostly benzotriazole（BTA））and Cu surface corrosion are two important problems in the defects of the wafer after the multilayer copper wiring chemical mechanical polishing（CMP）.According to BTA removal and Cu surface corrosion inhibition,a novel alkaline cleaning solution was proposed.The cleaning solution mainly consists of the FA/O chelating agent and FA/O surfactant.The FA/O chelating agents play an important role in the process of removing BTA.The FA/O surfactant can inhibit corrosion and improve the removal effect of BTA.The performances of the cleaning solution were researched using the contact angle measurement,scanning electron microscope（SEM）,metallurgical microscope,static etching rate（SER）.The cleaning solution was measured for the actual production line.The results demonstrate that the novel cleaning solution can effectively remove BTA and inhibit the Cu surface corrosion,and effectively solve several technical problems of the multilayer copper wiring in great large scale integration（GLSI）after CMP cleaning.

关 键 词：化学机械抛光(CMP)后清洗 苯并三氮唑(BTA)去除 铜腐蚀 螯合剂 表面活性剂 

分 类 号：TN305.2[电子电信—物理电子学]