TMA脉冲和吹扫时间对原子层沉积的氧化铝薄膜的影响  

Effects of trimethylaluminium pulse duration and purging time on the performance of Al_2O_3 film by atomic layer deposition

作　　者：李春亚[1] 张浩[1,2] 宋建涛[1] 丁星伟 魏斌[1] 

机构地区：[1]上海大学新型显示技术及应用集成教育部重点实验室,上海200072 [2]福建江夏学院电子信息科学学院有机光电子福建省高校工程研究中心,福州350108

出　　处：《功能材料》2017年第7期7178-7181,共4页Journal of Functional Materials

基　　金：国家重点基础研究发展计划(973计划)资助项目(2015CB655005);上海科委资助项目(16142202900);国家博士后基金资助项目(2015M580315)

摘　　要：采用原子层沉积技术(ALD)进行Al_2O_3薄膜工艺研究,获得85℃低温Al_2O_3薄膜ALD的最佳工艺条件。使用椭偏仪测试厚度,使用扫描探针显微镜对薄膜表面形貌进行分析,使用紫外-分光光度计对薄膜的透过率进行分析,所用水汽透过率测试仪器是自行开发的基于钙电学法的测试仪器。分析了在85℃低温下的生长工艺条件对薄膜性能的影响,从前驱体脉冲时间,吹扫时间等工艺条件,对Al_2O_3薄膜的工艺条件进行优化。以三甲基铝(TMA)和H_2O为前驱体制备的Al_2O_3薄膜:沉积速率为0.1nm/cycle,表面粗糙度为0.46nm,对550nm波长光透过率为99.2%,薄膜厚度不均匀性为1.89%,200 nm的Al_2O_3薄膜的水汽透过率为1.55×10^(-4) g/m^2/day。In this paper,Al_2O_3 thin films were fabricated by atomic layer deposition(ALD).The thickness,surface morphology and transmissivity of the Al_2O_3 films were investigated by ellipsometer,scanning probe microscope and spectrophotometer.The optimum process conditions of Al_2O_3 film were obtained by ALD at the low temperature of 85℃.The effect of the pulse and purge time on the properties of the deposited Al_2O_3 films were studied at 85℃.Al_2O_3 films were fabricated using trimethylaluminium(TMA)and water vapour(H_2O)as the chemical precursors with a depositon rate of 0.1nm/cycle and 1.89% uniformity.The root-mean-square surface roughness of the Al_2O_3 film was 0.46 nm.The light transmission of the Al_2O_3 layer was above 99.2%.The water vapor transmission rate values of 200 nm Al_2O_3 films are as low as 1.55×10^(-4) g/m^2/day at 25℃,65% RH.

关 键 词：原子层沉积 AL2O3薄膜 三甲基铝 脉冲 

分 类 号：TB332[一般工业技术—材料科学与工程]