基于GaN HEMT的13～17GHz收发多功能芯片  

A 13-17 GHz Transmitter/Receiver Multi-Function Chip Based on GaN HEMTs

作　　者：张磊[1] 付兴昌[2] 刘志军[2] 徐伟[2] 

机构地区：[1]海军驻南京地区电子设备军事代表室,南京210039 [2]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2017年第8期586-590,625,共6页Semiconductor Technology

摘　　要：基于GaN高电子迁移率晶体管(HEMT)工艺设计制作了一款收发(T/R)多功能芯片(MFC),主要用于射频前端收发系统。该芯片集成了单刀双掷(SPDT)开关用于选择接收通道或发射通道工作,芯片具有低噪声性能、高饱和输出功率和高功率附加效率等特点。芯片接收通道的LNA采用四级放大、单电源供电、电流复用结构,发射通道的功率放大器采用三级放大、末级四胞功率合成结构,选通SPDT开关采用两个并联器件完成。采用微波在片测试系统完成该芯片测试,测试结果表明,在13~17 GHz频段内,发射通道功率增益大于17.5 dB,输出功率大于12 W,功率附加效率大于27%。接收通道小信号增益大于24 dB,噪声系数小于2.7 dB,1 dB压缩点输出功率大于9 dBm,输入/输出电压驻波比小于1.8∶1,芯片尺寸为3.70 mm×3.55 mm。A transmitter/receiver（ T/R） multi-function chip（ MFC） based on GaN high electron mobility transistors（ HEMTs） technology was designed and fabricated for radio frequency front-end T/R systems. The chip integrated single pole double throw（ SPDT） switch for selecting transmitter channel or receiver channel. Moreover,the chip is characterized by low noise performance,high saturated output power and high power added efficiency. In the receiver channel of the chip,the low noise amplifier used four-stage amplification structure with single power supply and current-reuse. In the transmitter channel of the chip,the power amplifier used three-stage structure and four-power-cell for power combination in the end stage. The SPDT switch employed two parallel devices. The chip testing was completed with microwave on-chip testing system. The test results show that the transmitter channel has achieved a power gain of more than 17. 5 dB,saturated output power of greater than 12 W and the power added efficiency of more than 27% in the frequency range of 13-17 GHz. The receiver channel has achieved a small signal gain of more than 24 dB,a noise figure of less than 2. 7 dB,the output power at 1 dB compression point of larger than 9 dBm,and the input/output voltage standing-wave ratio of less than 1. 8 ∶ 1. The chip size is 3. 70 mm×3. 55 mm.

关 键 词：多功能芯片(MFC) 氮化镓 单片微波集成电路(MMIC) 功率放大器(PA) 低噪声放大器(LNA) 

分 类 号：TN402[电子电信—微电子学与固体电子学] TN43