SiC功率MOSFET器件研制进展  

Development of SiC Power MOSFET

作　　者：柏松[1] 黄润华[1] 陶永洪[1] 刘奥[1] 

机构地区：[1]宽禁带半导体电力电子器件国家重点实验室,南京电子器件研究所,江苏南京210016

出　　处：《电力电子技术》2017年第8期1-3,共3页Power Electronics

摘　　要：碳化硅(SiC)功率金属-氧化物半导体场效应管(MOSFET)以其优越的性能受到广泛关注,但受限于器件设计和工艺技术水平,器件的潜力尚未得到充分发挥。介绍了SiC功率MOSFET的结构设计和加工工艺,采用一氧化氮(NO)栅氧退火工艺技术研制出击穿电压为1 800 V、比导通电阻为8mΩ·cm^2的SiC MOSFET器件,测试评价了器件的直流和动态特性,关断特性显著优于Si IGBT。评估了SiC MOSFET器件栅氧结构的可靠性,器件的栅氧介质寿命及阈值电压稳定性均达到工程应用要求。Silicon carbide （SIC） metal-oxide-semiconductor field-effect transistor （MOSFET） power devices are expect- ed to displace Si IGBT from power electronics applications.However, due to low MOS channel mobility, SiC MOSFET have yet to demonstrate its full potential.The development of recent results on the SiC power MOSFET is presented. A breakdown voltage of 1 800 V, and a specific on resistance of 8mΩ·cm^2 is obtained for the developed SiC MOSFET. The gate-oxide related reliability is also evaluated to ensure the long lifetime of the devices.

关 键 词：金属-氧化物半导体场效应管 碳化硅 可靠性 

分 类 号：TN32[电子电信—物理电子学]