CMP中TEOS去除速率的一致性  

Uniformity of TEOS Removal Rate in the CMP Process

作　　者：张凯[1,2] 刘玉岭[1,2] 王辰伟[1,2] 牛新环[1,2] 江自超 韩丽楠 Zhang Kai Liu Yuling Wang Chenwei Niu Xinhuan Jiang Zichao Han Linan(School of Electronic and Information Engineering, Hebei University of Technology , Tianjin 300130, China Tianjin Key Laboratory of Electronic Materials and Devices, Tianjin 300130, China)

机构地区：[1]河北工业大学电子信息工程学院,天津300130 [2]天津市电子材料与器件重点实验室,天津300130

出　　处：《微纳电子技术》2017年第9期639-644,共6页Micronanoelectronic Technology

基　　金：国家中长期科技发展规划重大专项资助项目(2009ZX02308);河北省自然科学基金青年基金资助项目(F2015202267);天津市自然科学基金资助项目(16JCYBJC16100);河北工业大学优秀青年科技创新基金资助项目(2015007)

摘　　要：针对300 mm正硅酸乙酯(TEOS)镀膜片在化学机械平坦化(CMP)过程中中心去除速率快而边缘去除速率慢的问题,研究了抛光头摆动位置、抛光头不同区域压力和非离子型表面活性剂对TEOS去除速率一致性的影响。实验结果显示,抛光头距抛光盘中心越远,中心去除速率越慢,去除速率一致性越好;增加抛光头边缘压力,加快了边缘去除速率,提高了去除速率一致性;增加非离子表面活性剂添加量,提高了温度分布均匀性,进而改善去除速率一致性。与初始工艺对比,在抛光头摆动位置距抛光盘中心7.2~8.2英寸(1英寸=2.54 cm)、抛光头边缘压力增加20%、添加非离子表面活性剂体积分数1.5%条件下,片内非均匀性(WIWNU)降低了60.9%。Based on the problem that the removal rate of the 300 mm ethyl silicate （TEOS） blanket wafer was fast in the center and slow on the edge in the chemical mechanical planarization （CMP） process, the effects of the polishing head sweep position, pressures in different regions of polishing head and nonionic surfactants on the TEOS removal rate uniformity were studied. The experimental results show that by increasing the distance between the polishing head and the center of the polishing disk, the removal rate decreases at the wafer center, and the removal rate uniformity improves. The removal rate on the wafer edge increases and the removal rate uniformity improves by increasing the pressure of the polishing head edge. The uniformity of temperature distribution improves by adding nonionic surfactants, and thus the removal rate uniformity improves. Compared with the original process, when the distance between the head sweep position and the polishing disk center is 7.2 - 8.2 inches （1 inch = 2.54 cm）, the pressure of the polishing head edge increases 20% and the nonionic surfactant is added with the volume fraction of 1.5%,the within-wafer nonuniformity （WIWNU） is reduced by 60.9%.

关 键 词：正硅酸乙酯(TEOS) 化学机械平坦化(CMP) 非离子型表面活性剂 去除速率一致性 片内非均匀性(WIWNU) 

分 类 号：TN305.2[电子电信—物理电子学]