沟道长度对碳纳米管薄膜晶体管阈值电压的调控作用  

Tuning Threshold Voltage of Carbon Nanotube Thin Film Transistors by Channel Length Engineering

作　　者：董国栋[1] 夏继业 孟虎[2] 田博元 黄奇 赵杰 毛德丰[2] 刘晓惠[2] 方家[2] 梁学磊[1] 

机构地区：[1]"纳米器件与物理化学"教育部重点实验室北京大学信息科学技术学院,北京100871 [2]京东方科技集团股份有限公司,北京100176

出　　处：《真空科学与技术学报》2017年第8期821-825,共5页Chinese Journal of Vacuum Science and Technology

摘　　要：根据碳纳米管薄膜晶体管特有的渗流输运机制,通过改变器件的沟道长度实现了对器件阈值电压的调控。与通常的晶体管阈值电压调控方法相比,该方法具有工艺简单且阈值电压调控范围大的优势。这种阈值调控方法不仅是对常规晶体管阈值调控方法的有益补充,同时也对碳纳米管薄膜晶体管的实际应用进程具有重要的促进作用。The prototyped carbon nanotube thinfilm transistors（ CNT-TFTs） were fabricated with its channel made of CNT network film,deposited on Si substrate and consisting of randomly oriented single walled semiconducting CNTs. Carriers transport in CNT-TFT is well described by the stick percolation theory. The experimental results demonstrate that the threshold voltage of CNT-TFTs can be tuned simply by changing the channel length of CNTTFTs on the basis of the stick percolation theory. The newlydeveloped technique is very simple and the threshold voltage can be tuned in a fairly wide range. We suggest that the novel threshold tuning method may be a complementation to the conventional technique,which is also important for commercialization of CNT-TFTs.

关 键 词：碳纳米管 薄膜晶体管 阈值电压 沟道长度 

分 类 号：O649[理学—物理化学]