还原时间对AlO_x/WO_x RRAM开关速度的调制作用  

Modulation Effect of Reducing Time on Switching Speed in AlO_x/WO_x RRAM

作　　者：徐娟[1] 傅雅蓉 林殷茵[1] 

机构地区：[1]复旦大学专用集成电路与系统国家重点实验室,上海201203

出　　处：《半导体技术》2017年第9期650-655,668,共7页Semiconductor Technology

基　　金：国家高技术研究发展计划(863计划)资助项目(2014AA032902)

摘　　要：基于128 kbit AlO_x/WO_x双层结构阻变存储器(RRAM)芯片,提出并验证了还原时间对RRAM开关速度的调制作用,同时设计了一种固定电压幅值逐步增大脉宽的算法用于RRAM阵列中速度的测试。还原处理的时间越长,AlO_x层的厚度越薄,同时氧空位的含量增多,可加快导电细丝的形成、断裂和重新连接,进而提升芯片的开关速度。测试结果表明,还原时间由10 min增加至30 min,在4 V和4.5 V操作电压下,FORMING速度分布的均值分别由200 ns减小至120 ns和由100 ns减小至60 ns;在4 V和4.5 V操作电压下,RESET速度分布的均值分别由160 ns减小至120 ns和由120 ns减小至100 ns;SET速度分布的均值在4 V电压下可由120 ns减小至80 ns。此外,还原时间的增长可以改善速度分布的一致性,减小速度的波动。Based on the 128 kbit test macro of AlO_x/WO_xbi-layer resistive random access memory（ RRAM） chip,the modulation effect of the reducing time on the RRAM switching speed was proposed and verified. An extending pulse width with fixed voltage amplitude testing algorithm was designed for RRAM array speed test. Longer reducing time leads to a faster switching speed of the chip due to thinner AlO_xlayer and more oxygen vacancy content in AlO_xlayer which could accelerate the formation,rupture and reconnection of conductive filament. The experimental results show that by increasing the reducing time from 10 min to 30 min,the mean value of the FORMING speed distribution is reduced from 200 ns to 120 ns under 4 V and from 100 ns to 60 ns under 4. 5 V. The mean value of the RESET speed distribution is reduced from 160 ns to 120 ns under 4 V and from 120 ns to 100 ns under 4. 5 V. The mean value of the SET speed distribution is reduced from 120 ns to 100 ns under 4 V. Furthermore,longer reducing time can improve the uniformity of speed distribution and decrease speed variation.

关 键 词：阻变存储器 开关速度 还原时间 速度波动 速度测试算法 

分 类 号：TN405[电子电信—微电子学与固体电子学]