三维打印制备氮化硅基绝缘基座的试验研究  

Experimental Study on Silicon Nitride-based Insulating Base Prepared by Three-dimensional Printing

作　　者：梁云忠 伍权[1] 汤耿 李红[1] 徐卫平[1] Liang Yunzhong Wu Quan Tang Geng Li Hong Xu Weiping(School of Mechanical and Electrical Engineering, Guizhou Normal University, Guiyang 550001, China)

机构地区：[1]贵州师范大学机械与电气工程学院,贵阳550001

出　　处：《绝缘材料》2017年第9期36-39,共4页Insulating Materials

基　　金：贵州省自然科学基金资助项目(黔科合LH字[2014]7043号)

摘　　要：基于目前电连接器向轻量化和微型化的方向发展,提出了采用三维打印的方法制备密度小、具有规则排列孔位的微型电连接器绝缘基座。采用α-Si_3N_4、BN、SiO_2、玉米淀粉等制成浆料,通过三维打印的方法,得到孔位尺寸排列为0.635 mm的绝缘基座胚体,经微波烧结成型制得绝缘基座。结果表明:当α-Si_3N_4、BN、SiO_2、(C_6H_10O_5)n按第1~3组配比制得浆料时,浆料黏度随剪切速度的变化规律一致,且具有较好的打印成型性能;微波烧结后基座尺寸收缩率为8%~18%,孔位误差为±0.05 mm,复合材料基座相邻孔位的耐电压范围为1 000~1 400 V,绝缘电阻为6.5×1010~5.5×1012Ω,淀粉挥发形成的空隙直径为2~10μm,密度为1.25~1.44 g/cm3。Based on the light weight and miniaturation development of electrical connectors, a three-dimen- sional printing method was proposed to prepare miniature electrical connectors insulating base with small density and regularly arranged holes, a-Si3N4, BN, SiO：, corn starch and other materials were used to prepare slurry, and an insulating base embryo with 0.635 mm×0.635 mm of arranged holes was prepared by three-dimensional printing method. Then the insulating base was obtained through microwave sintering molding. The results show that when the mass proportion of a-Si3N4, BN, SiO2 and （C6H10O5）. is in accordance with group 1- 3, the viscosity of the slurry changes in the same law with shear velocity, and the slurry has better printing performance. After microwave sintering, the shrinkage rate of the base is 8%- 18%, the hole position error is ±0.05 mm, the withstand voltage and insulation resistance range of adjacent holes of the composite insulation base is 1 000～ 1 400V and 6.5×10^10～5.5×10^12 Ω, respectively; the diameter of voids formed by starch evaporation is 2 ～ 10 μm, and the density is 1.25- 1.44 g/cm^3.

关 键 词：绝缘基座 3D打印 氮化硅 轻量化 电连接器 

分 类 号：TM215.92[一般工业技术—材料科学与工程] TM503.5[电气工程—电工理论与新技术]