硒化镉晶片的化学机械抛光  

Chemical Mechanical Polishing of CdSe Wafers

作　　者：高彦昭 杨瑞霞 张颖武[2] 王健[2] 徐世海[2] 程红娟[2] 

机构地区：[1]河北工业大学电子信息工程学院,天津300401 [2]中国电子科技集团公司第四十六研究所,天津300220

出　　处：《半导体技术》2017年第10期769-773,共5页Semiconductor Technology

基　　金：天津市自然科学基金重点项目(15JCZDJC37800)

摘　　要：硒化镉(CdSe)的表面加工质量对CdSe基器件的性能至关重要。化学机械抛光(CMP)是一种获得高质量晶体加工表面的常用方法。为改善CdSe晶片的表面加工质量,以SiO_2水溶胶配制抛光液,研究了抛光液磨料质量分数、抛光液pH值、氧化剂NaClO的质量分数、抛光盘转速和抛光时间等因素对CdSe晶片抛光去除速率和表面质量的影响,优化了CdSe的CMP工艺参数。结果表明,在优化工艺条件下,CdSe的平均去除速率为320 nm/min,晶片的抛光表面无明显划痕和塌边现象。原子力显微镜(AFM)测量结果表明,抛光后的CdSe晶片表面粗糙度为0.542 nm,可以满足器件制备要求。The processed quality of cadmium selenide （CdSe） surface plays an important role in the performance of the CdSe-based devices.Chemical mechanical polishing（ CMP） is a common method to get high-quality processing surfaces of crystals.In order to improve the surface processing quality of the CdSe wafer,the polishing solution was prepared with SiO2 hydrosol.The effects of the mass fraction of the polishing solution abrasive,the pH value of the polishing solution,the mass fraction of the oxidant NaClO,the rotating speed of polishing disk and the polishing time on the polishing removal rate and surface quality of the CdSe wafer were studied,and the CMP process parameters of the CdSe were optimized.The results show that under the optimized process conditions,the average removal rate of the CdSe is 320 nm/min,and no obvious scratches and edge collapse are observed on the polished surface of the wafer.The measurement results of atomic force microscope （AFM） show that the surface roughness of the polished CdSe wafer is 0.542 nm,which can meet the fabrication requirement of device.

关 键 词：CdSe晶片 化学机械抛光(CMP) SiO2抛光液 去除速率 表面粗糙度 

分 类 号：TN305.2[电子电信—物理电子学]