溶胶-凝胶法制备无衬底BaTiO_3介质薄膜及其结构与性能  

Structure and dielectric properties of substrate-free BaTiO_3 thin films prepared by sol-gel method

作　　者：李瑾瑾[1] 朱归胜[1,2] 徐华蕊[1] 王盼[1] 

机构地区：[1]桂林电子科技大学材料科学与工程学院,广西桂林541004 [2]电子科技大学微电子与固体电子学院,成都610054

出　　处：《桂林电子科技大学学报》2017年第4期327-331,共5页Journal of Guilin University of Electronic Technology

基　　金：国家自然科学基金(61540073);中国博士后基金(2015M580781);广西自然科学基金(2016GXNSFAA380053);广西信息材料重点实验室基金(161014-Z)

摘　　要：为了进一步减小芯片用嵌入式电容的体积,实现电容器的薄型化与小型化,采用溶胶-凝胶法在可热解衬底上制备了无衬底BaTiO_3薄膜,实现了薄膜的剥离与转移,并利用XRD、SEM及AFM研究了不同退火条件下BaTiO_3薄膜的晶相结构及表面形貌,利用阻抗分析仪测试了BaTiO_3薄膜的介电性能。结果表明:BaTiO_3薄膜在800℃退火处理后呈现出立方相钙钛矿结构,且薄膜晶体结构致密,基本无裂纹,室温下(1kHz)测量其介电常数为245,介电损耗为0.057。无衬底BaTiO_3薄膜的制备可大大降低薄膜电容器的体积,且不会损害其介电性能,为制备嵌入式薄膜电容器提供了一种新方法。In order to adapt to the miniaturization of electronic products,the problem of embedded capacitors for chips needs to be solved.The substrate-free BaTiO3 thin film is prepared on the pyrolysis substrate by sol-gel method and the exfoliation and transfer of thin films is realized.The phase structure and surface morphology of the BaTiO3 thin films annealed with different temperatures are studied by XRD,SEM and AFM,and the dielectric properties of BaTiO3 thin films are also studied by the impedance analyzer.The results demonstrate that BaTiO3 thin films consist of a perovskite phase with a cubic symmetry and show a dense and crack-free structure after being annealed at 800 ℃.The substrate-free thin films possess a dielectric constant of 245 and loss tangent of 0.057 at room temperature（1kHz）.The substrate-free BaTiO3 thin films can effectively reduce the volume of a film capacitor without any decline in its dielectric properties.Thus it is a new approach for preparing embedded thin-film capacitors.

关 键 词：无衬底薄膜 溶胶-凝胶法 牺牲层 介电性能 

分 类 号：TM22[一般工业技术—材料科学与工程]