N型氢化纳米晶硅氧薄膜的制备及其光电特性的研究  

Fabrication and Investigation of the Opto-electrical Properties of n-nc-SiO_x:H Thin Films

作　　者：王奉友 郜艳波 杨景海[1,2] 

机构地区：[1]吉林师范大学物理学院 [2]吉林师范大学功能材料物理与化学教育部重点实验室

出　　处：《通化师范学院学报》2017年第10期48-50,54,共4页Journal of Tonghua Normal University

基　　金：国家自然科学基金项目(61475063;61505067;21576111)

摘　　要：采用等离子体增强型化学气相沉积(PECVD)的方式,以硅烷(SiH_4)、氢气(H_2)、磷烷(PH_3)以及二氧化碳(CO_2)等气体为原料,制备具有宽带隙、高电导特性的n型氢化纳米晶硅氧(n-nc-SiO_x:H)薄膜,并对其进行了结构分析、暗电导测试和透射反射谱测试.结果表明,增加反应过程中CO_2流量会展宽nnc-SiO_x:H薄膜的光学带隙,增加H_2流量将改善n-nc-SiO_x:H薄膜的晶化率.在H2流量为320sccm,CO_2流量为0.9sccm的条件下,制备n-nc-SiO_x:H薄膜的光学带隙可达2.47e V,电导为0.1S/cm.The n-type hydrogenated nano-crystalline silicon oxide thin films with wide optical band gap andhigh conductivity have been prepared by plasma enhanced chemical vapor deposition（PECVD）technique with silane（SiH4）,hydrogen（H2）,phosphine（PH3）and carbon dioxide（CO2）gas sources.The structure properties and photo-electrical characteristics of the thin films have also been exam-ined in detail. The results indicate that increasing the flow rate of the CO2 will widen the opticalbandgap of the thins films;while the increasing the flow rate of the H2 will improve the crystalliza-tion of the thin films. The n-nc-SiOx：H films with a bandgap of 2.47 e V and a conductivity of the0.1 S/cm could be achieved when the flow rate of H2 and CO2 is 320 sccm and 0.9 sccm,respectively.

关 键 词：等离子体化学气相沉积 纳米晶硅氧 光学带隙 晶化率 

分 类 号：TM914.41[电气工程—电力电子与电力传动]