磁控溅射法制备铝掺杂氧化锌薄膜研究进展  

Research Progress of Al-Doped Zinc Oxide Thin Films by Magnetron Sputtering Method

作　　者：刘亚强[1,2] 陈青清[1] 李朋 

机构地区：[1]商丘师范学院物理与电气信息学院,河南商丘476000 [2]郑州大学物理工程学院,河南郑州450001

出　　处：《信阳师范学院学报（自然科学版）》2017年第4期667-671,共5页Journal of Xinyang Normal University(Natural Science Edition)

基　　金：国家自然科学基金项目(U1404115);河南省高等学校重点科研项目计划(16A430024)

摘　　要：铝掺杂氧化锌(AZO)薄膜是一种n型半导体光学透明薄膜,具有优异的光电转换特性.综述了磁控溅射法制备AZO薄膜的研究现状.介绍了衬底温度、溅射功率、氧分压、溅射角度、衬底类型和退火温度等工艺参数对AZO薄膜的微结构、表面形貌和光电性能的影响.展望了其今后的研究方向和应用前景.Al-doped zinc oxide（ AZO） film with excellent photoelectric performance is an n-type transparent conductive oxide film. The current research progress of AZO films prepared by magnetron sputtering method were reviewed with 26 references. The effects of sputtering parameters on the microstructure,surface morphology and photoelectric properties of AZO films were analyzed. The future prospects for the AZO films development were also discussed.

关 键 词：AZO薄膜 磁控溅射法 光电性能 

分 类 号：TN304.05[电子电信—物理电子学]