石墨衬底上铝诱导法制备多晶硅薄膜  

Preparation of Polycrystalline Silicon Thin Film by AIC on Graphite Substrate

作　　者：魏立帅[1] 陈诺夫[1] 张航 王从杰[1] 贺凯[1] 白一鸣[1] 陈吉堃[2] 

机构地区：[1]华北电力大学可再生能源学院,北京102206 [2]北京科技大学材料科学与工程学院,北京100083

出　　处：《人工晶体学报》2017年第9期1709-1713,共5页Journal of Synthetic Crystals

基　　金：北京市自然科学基金(2151004);中央高校基本科研业务费专项资金(2016MS50)

摘　　要：利用磁控溅射技术在石墨衬底上制备了石墨/a-Si/Al和石墨/Al/a-Si叠层结构,采用常规退火(CTA)和快速热退火(RTA)对样品进行退火,系统研究了不同退火条件对多晶硅薄膜制备的影响。利用X射线衍射(XRD),拉曼光谱(Raman)对制备的多晶硅薄膜进行表征,并利用谢乐公式计算了晶粒尺寸,结果表明制备的多晶硅薄膜具有高度(111)择优取向,结晶质量良好,利于后续外延制作多晶硅厚膜电池。基于实验结果,建立了铝诱导晶化模型,很好的解释了实验现象。In this paper,graphite/a-Si/Al and graphite/Al/a-Si laminated structures were prepared on graphite substrate by magnetron sputtering,and systematically studied the effects of the samples annealed by conventional annealing（ CTA） and rapid annealing（ RTA）. The poly-Si thin films were characterized by means of X-ray diffraction（ XRD）,Raman spectroscopy（ Raman）,and the grain size was calculated by the Scherrer formula,which show that the samples with strong preferred（ 111） orientation and high crystallization quality are ideal for epitaxial growth poly-Si thick film cells. At the same time,we established the AIC model to explain the mechanism in the inverted AIC process.

关 键 词：磁控溅射 铝诱导 石墨衬底 多晶硅薄膜 

分 类 号：O484[理学—固体物理]