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作 者:焦岳超 刘献省[2] 瞿博阳[1] 张鹏[1] 闫李 朱永胜[1] 付凯
机构地区:[1]中原工学院电子信息学院,郑州450007 [2]河南大学物理电子学院光伏材料省重点实验室,开封475004
出 处:《人工晶体学报》2017年第9期1875-1878,共4页Journal of Synthetic Crystals
基 金:国家自然科学基金面上项目(61673404);国家自然科学基金青年基金(61305080)
摘 要:本文采用水热法制备了γ-Bi_2Sn_2O_7并研究了其在可见光区的光电响应。Bi_2Sn_2O_7的晶体结构和光电响应特性分别用X射线衍射和表面光电压谱进行表征。研究结果表明,合成的Bi_2Sn_2O_7呈现γ相立方结构,通过吸收光谱估算光学带隙为2.67 e V,比α-Bi_2O_3(2.85 e V)的光学带隙小。Bi_2Sn_2O_7的光电响应相对于α-Bi_2O_3在可见光区展现出一定的优势,同时对外加电压有很强的响应。Gamma phase( γ) Bi2Sn2O7 was synthesized by hydrothermal method and its photoelectric response in visible light was investigated. The structure and photoelectric response properties were characterized by X-ray diffraction and surface photovoltage spectroscopy. The results show the asprepared Bi2Sn2O7 presents a presents a gamma( γ) phase cubic structure and has an optical band gap( 2. 67 e V) measured by absorption spectrum,which is narrower than that of α-Bi2O3( 2. 85 e V). The photoelectric response of Bi2Sn2O7 in visible light area displays its advantage compared with α-Bi2O3.Meanwhile,it has strong response under the applied voltage.
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