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作 者:闫祥宇 粟雅娟[1] 贾昆鹏 李梅 马源骏 韦亚一[1] Yan Xiangyu Su Yajuan Jia Kunpeng Li Mei Ma Yuanjun Wei Yayi(Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics , Chinese Academy of Science, Beijing 100029, China University of Chinese Academy of Science, Beijing 100049, China School of Optoelectronics, Beijing Institute of Technology, Beijing 100081, China)
机构地区:[1]中国科学院微电子研究所微电子器件与集成技术重点研究室,北京100029 [2]中国科学院大学,北京100049 [3]北京理工大学光电学院,北京100081
出 处:《微纳电子技术》2017年第11期745-751,共7页Micronanoelectronic Technology
基 金:国家重点研发计划资助项目(2016YFA02023)
摘 要:石墨烯/金属接触是石墨烯应用在集成电路领域的一个重要问题,按照其接触方式的不同,介绍了近年来关于石墨烯/金属接触的研究,主要分析了面接触与边缘接触的接触机理以及不同接触方式的器件结构,比较了各种接触方式的优劣。由于金属与石墨烯的电流主要通过边缘传输,通过在石墨烯与金属的接触界面引入边缘接触,增加了电流流经的路径,从而减小石墨烯与金属的接触电阻率。最后总结出边缘接触是最可能优化其接触电阻率的技术方案,并展望了石墨烯/金属接触的研究前景。Graphene/metal contact is an important issue for graphene application in the field of in- tegrated circuits. The recent studies of the graphene/metal contact are introduced in accordance with the different contact modes. The contact mechanisms of the surface contact and edge contact and the device structures of different contact modes are mainly analyzed, and the advantages and disadvantages for various kinds of contact modes are compared. At the interface between the metal and graphene, the current is mainly transmitted through the edge, so by introducing edge contacts at the contact interface between graphene and metal, the paths of the current flow increase, thereby the contact resistivity between graphene and metal decreases. Finally, it is con- eluded that the edge contact is the most likely technical scheme to optimize the contact resistivity, and the research prospect of the graphene/metal contact is provided.
关 键 词:石墨烯 金属 面接触 边缘接触 欧姆接触 二维材料
分 类 号:TN304.18[电子电信—物理电子学]
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