基于GaN HEMT的Doherty功率放大器设计  

Design of Doherty power amplifier based on GaN HEMT

作　　者：彭菊红 郑丽群 王旭光 杨维明 

机构地区：[1]湖北大学计算机与信息工程学院,湖北武汉430062

出　　处：《现代电子技术》2017年第22期131-133,136,共4页Modern Electronics Technique

基　　金：国家级大学生创业训练项目资助(201210512087);国家自然科学基金项目资助(51472079)

摘　　要：设计一款基于GaN HEMT的S波段Doherty功率放大器(DPA)。主放大器是采用GaN HEMT设计的AB类功放,辅助放大器是GaN HEMT的C类功放。利用ADS对电路进行仿真,单音测试结果表明,DPA工作频率在2.3~2.4 GHz,输入功率为29 dBm时,工作增益不小于14 dB,输出功率大于43 dBm,功率附加效率超过65%。分析了辅助放大器偏置电压对DPA性能的影响,偏置电压变小,DPA的效率和线性度较好。A GaN HEMT based Doherty power amplifier(DPA)working in S-band is designed,whose main amplifier is the class AB amplifier designed with GaN HEMT,and auxiliary amplifier is the class C power amplifier designed with GaN HEMT.The circuit is simulated with ADS.The single tone test results show that,when the DPA works at 2.3~2.4 GHz and the input power is 29 dBm,the gain of DPA is not less than 14 dB,the output power is higher than 43 dBm,and the power added efficiency is higher than 65%.The effect of the auxiliary amplifier′s offset voltage on DPA performance is analyzed.It shows that the lower the offset voltage is,the better the DPA efficiency and linearity become.

关 键 词：功率放大器 GAN HEMT DOHERTY功率放大器 AB类功放 

分 类 号：TN710-34[电子电信—电路与系统] TN722