表面势垒与表面能级的关系和实验探究  

Theoretical Relationship of Surface Energy Level with Surface Potential and Experiments Study

作　　者：刘嘉欣[1] 冯仕猛[1] 顾琳慧 雷刚[2] 鞠雪梅[2] 

机构地区：[1]上海交通大学物理与天文系,上海200240 [2]上海空间电源研究所,上海200245

出　　处：《上海航天》2017年第1期105-109,共5页Aerospace Shanghai

基　　金：航天先进技术联合研究中心项目资助(USVAST2015-28)

摘　　要：对半导体表面势垒与表面能级的关系进行了理论研究。用薛定谔方程和矩阵理论推导出表面电子波函数能量的本征方程,给出表面势垒与表面能级间的非线性关系。用计算机给出了不同表面势垒下表面能级解集的模拟曲线。模拟结果表明:不同的表面势垒,表面能级的数量和对应的分布不同,表面势能较低时,表面能级及对应的表面态主要集中于低能量区;表面势能较高时,表面能级或表面态均匀分布于较大的能量范围。实验探测了不同绒面的半导体光生载流子寿命,发现绒面结构不同的半导体光生载流子寿命不同;为提高光电器件的转换效率,应避免绒面上出现尖锐的微结构,尽量使尖锐处适度钝化。理论研究和相关的物理解释对提高半导体器件光电转换效率有一定的参考意义。The relationship between surface potential and surface energy level （surface localized state） was studied theoretically in this paper. The eigen equation of the electronic wave function was derived by using Schrodinger equation and the matrix theory. The nonlinear relationship between surface potential and surface energy level was obtained. Some simulation curves were gained by computer, which could give a series of solution of the surface energy level under different surface potential. The theoretical simulation curves showed that the distribution and the number of surface energy level were different when the surface potential was different. Surface energy level and its relative surface state were concentrated in low energy region when surface potential was low. And surface energy level or relative surface state was distributed uniformly in large energy region when surface potential was high. The photo-carrier lifetime of Si with different textured structure was detected through experiment. The results demonstrated that the different photo-carrier lifetime for the Si-semiconductor of different textured structure. The sharp micro-structure should be avoided on textures and the sharp should be blunted as possible to improve conversion efficiency of photoelectric device. The theoretical study and relative physical expression are meaningfull for further study of photo-electric conversion efficiency.

关 键 词：半导体 表面态 表面能级 表面势垒 本征方程 绒面结构 态密度 光生载流子寿命 

分 类 号：O47[理学—半导体物理]