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机构地区:[1]北京大学电子系,纳米器件物理与化学教育部重点实验室,北京100871
出 处:《物理学报》2017年第21期205-222,共18页Acta Physica Sinica
基 金:国家重点研发计划纳米科技重点专项项目(批准号:2016YF0201900);国家自然科学基金(批准号:61390504,61621061);北京市科学技术委员会先导与优势材料创新项目(批准号:D161100002616001-3)资助的课题~~
摘 要:本文回顾了石墨烯霍尔传感器的相关研究工作.通过改善石墨烯生长转移和霍尔元件的微加工工艺,石墨烯霍尔元件和霍尔集成电路都展示出超越传统霍尔传感器的优异性能.石墨烯霍尔元件的灵敏度、分辨率、线性度和温度稳定性等重要指标都优于传统商用霍尔元件.通过开发一套钝化工艺,霍尔元件的稳定性有了明显提升.结合石墨烯材料的特点,展示了石墨烯在柔性磁传感和多功能传感领域的新颖应用.此外,成功实现了石墨烯/硅互补型金属-氧化物-半导体(CMOS)混合霍尔集成电路,并进行了应用展示.通过发展一套低温加工工艺(不超过180℃),将石墨烯霍尔元件制备在硅基CMOS芯片的钝化层上,从而与硅基CMOS电路实现了单片集成.本文的研究结果表明石墨烯在霍尔磁探测方向拥有重大的性能优势,在产业化应用中有巨大发展潜力.The state-of-the-art graphene Hall elements and integrated circuits are reviewed. By optimizing the growth and transfer of graphene and the micro-fabrication process of Hall sensor, graphene Hall elements and integrated circuits outperform conventional Hall sensors in many aspects. Graphene Hall elements exhibit better sensitivities, resolutions,linearities and temperature stabilities than commercialized Hall elements. Through developing a set of passivation processes, the stabilities of graphene Hall elements are improved. Besides, the flexible magnetic sensing and multifunctional detection applications based on graphene are demonstrated. In addition, graphene/silicon hybrid Hall integrated circuits are realized. By developing a set of low temperature processes(below 180℃), graphene Hall elements are monolithically integrated onto the passivation layer of silicon complementary metal oxide semiconductor chip. This work demonstrates that graphene possesses significant performance advantages in Hall magnetic sensing and potentially practical applications.
分 类 号:TP212[自动化与计算机技术—检测技术与自动化装置]
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