高功率980nm半导体激光器有源区制备中的Ⅴ/Ⅲ比优化  

Optimization of Ⅴ/Ⅲ Ratio in Active Region for the Fabrication of High Power 980nm Semiconductor Lasers

作　　者：米国鑫[1] 李建军[1] 廖翌如 王元诚 王海阔 邓军[1] 韩军[1] 

机构地区：[1]北京工业大学光电子技术省部共建教育部重点实验室,北京100124

出　　处：《半导体光电》2017年第5期685-688,共4页Semiconductor Optoelectronics

基　　金：北京市教委能力提升项目(PXM2016_014204_500026);光电子技术教育部重点实验室发展基金项目(PXM2017_014204_500034)

摘　　要：高质量的MOCVD外延材料是研制高性能半导体光电器件的基础。通过制作简单的量子阱结构,利用光荧光系统进行快速表征,得到Ⅴ/Ⅲ比不但会影响PL的强度,还会影响片内均匀性的结论。根据标准偏差统计法,确定了InGaAs量子阱外延的最佳Ⅴ/Ⅲ比为35。基于优化的外延参数,制备了波长为980nm的半导体激光器,在15A脉冲电流下,腔面未镀膜时器件的平均输出功率为9.6W,中心波长为977.2nm。研究结果为半导体激光器的研制提供了一种快速有效的方法。High quality epitaxial material is the precondition of high performance semiconductor optoelectronic devices.With the test of PL photoluminescence system,it is found that both the intensity and uniformity are affected byⅤ/Ⅲratio after making the characterization of a convenient quantum well structure.With the standard deviation statistic algorithm,it is concluded that luminous intensity comes to be the highest when theⅤ/Ⅲ ratio is 35 during the growth of quantum wells.Based on the optimization of process parameters,high-power 980 nm laser diodes have been fabricated.For the uncoated devices,the average output power and central wavelength is 9.6Wand 977.2nm respectively at a 15 Apulsed current.

关 键 词：半导体激光器 MOCVD PL Ⅴ/Ⅲ比 

分 类 号：TN248.4[电子电信—物理电子学]