单层及少层二硫化钼薄膜的制备及其气敏性能研究  

Preparation of Monolayer and Few-layer MoS_2 Film and Its Gas Sensing Property

作　　者：刘云云 许婷婷[1] 田永涛[1] 李新建[1] LIU Yunyun;XU Tingting;TIAN Yongtao;LI Xinjian(College of Physics and Engineering, Zhengzhou University, Zhengzhou 450001 , China)

机构地区：[1]郑州大学物理工程学院,河南郑州450001

出　　处：《郑州大学学报（理学版）》2017年第4期66-70,共5页Journal of Zhengzhou University:Natural Science Edition

基　　金：国家自然科学基金项目(11504331)

摘　　要：通过化学气相沉积法,以MoO_3和S粉为反应物制备大面积的二硫化钼(MoS_2)薄膜,通过拉曼光谱、原子力显微镜、透射电子显微镜对产物的层数和结构进行表征,结果证明通过该方法制备的MoS_2薄膜具有单层及少层结构.气敏测试结果表明该超薄MoS_2薄膜在室温下对NO具有良好的灵敏度和选择性,对体积浓度为10、50(×10^(-6))的NO气体的灵敏度为9.3%和19.3%,响应时间(恢复时间)快,分别为281 s(298 s)和120 s(190 s),其优异的气敏性能与超薄MoS_2薄膜的高比表面积息息相关.Large-area MoS2 films were grown by chemical vapor deposition method using Mo0 3and sulfur powder as raw materials. The products were characterized by Raman spectroscopy, atomic force micro-scope and transmission electron microscope, and were confirmed to be monolayer and few-layer MoS2 films. The sensing test showed that the ultra-thin MoS2 film was of high sensitivity and selectivity to NO at room temperature. The sensitivity was 9. 3 % and 19.3% to NO , and the response time （recovery time） was 281 s （298 s） and 120 s （190 s） at gas concentrations of 10, 50（ ×10-6） , respectively. The high performance was attributed to the large surface- to-volume ratio of the ultra-thin MoS2 film .

关 键 词：化学气相沉积法 MOS2薄膜 少层结构 气敏性能 

分 类 号：TB321[一般工业技术—材料科学与工程] O484.4[理学—固体物理]