三维集成中的TSV技术  

TSV Technology in 3D Integration

作　　者：张宁[1] 

机构地区：[1]合肥工业大学信息工程系,安徽242200

出　　处：《集成电路应用》2017年第11期17-22,共6页Application of IC

基　　金：安徽省科技型中小企业技术创新项目(14C26213401674)

摘　　要：近几年,硅通孔(through-silicon vias,TSV)技术发展迅速,拥有着低功耗、小外形、高性能和高堆叠密度等优势的它得到工业界的广泛认可,具有延续摩尔定律发展的潜力。本文中作者介绍了TSV的工艺流程和关键技术,对蚀刻、分离、金属填充,以及铜暴露等重要工艺流程进行了详细描述。In recent years, silicon vias （through-silicon vias, TSV） technology is developing rapidly.It has been widely recognized by industry for its advantages of low power consumption, small outline, high performance and high stack density.It has the potential to continue the development of Moore＇s law.In this paper, the author introduces the process flow and key technologies of TSV. The important processes such as etching, separation, metal filling, and copper exposure are described in detail.

关 键 词：集成电路制造 硅通孔 刻蚀 铜填充 铜暴露 

分 类 号：TN405[电子电信—微电子学与固体电子学]