高灵敏度InAs/AlSb量子阱的霍尔器件(英文)  

High Sensitivity Hall Devices with Al Sb/In As Quantum Well Structure

作　　者：武利翻 苗瑞霞 李永峰 杨小峰 

机构地区：[1]西安邮电大学电子工程学院,陕西西安710121

出　　处：《发光学报》2017年第12期1650-1653,共4页Chinese Journal of Luminescence

基　　金：国家自然科学基金青年基金(51302215);陕西省教育厅科研计划(17JK0698)资助项目~~

摘　　要：用分子束外延在Ga As(001)衬底上生长了两个量子阱结构的霍尔器件,一个是没有掺杂的量子阱结构,一个是Si-δ掺杂的量子阱结构。研究了霍尔器件的面电子浓度和电子迁移率与温度的关系。结果表明,在300 K下,Si-δ掺杂的量子阱结构的电子迁移率高达25 000 cm^2·V^(-1)·s^(-1),并且该器件输入电阻和输出电阻较低。同时,Si-δ掺杂的量子阱结构霍尔器件的敏感度好于没有掺杂的量子阱结构霍尔器件。An unintentionally doped Al Sb/In As quantum well（QW）structure and a Si-δdoped quantum well structure on Ga As（001）substrates were grown by molecular beam epitaxy（MBE）.The dependence of sheet electron density and electron mobility on the measurement temperature were investigated.It is found that electron mobility as high as 25 000 cm^2·V^-1·s^-1 has been achieved for 300 K in the Si-δdoped quantum well structure.The Hall devices with high sensitivity and good temperature stability were fabricated based on the Si-δdoped Al Sb/In As quantum well structures.Their sensitivity is markedly superior to Hall devices of an unintentionally doped Al Sb/In As quantum well.

关 键 词：霍尔器件 量子阱 Δ掺杂 分子束外延 

分 类 号：TN305[电子电信—物理电子学] TN382