基于小信号S参数的MOSFET射频功率放大器设计  

Design of MOSFET RF power amplifier based on small signal S-parameters

作　　者：宁志强[1] 刘太君[1] 叶焱[1] 许高明[1] 陆云龙[1] 

机构地区：[1]宁波大学信息科学与工程学院,浙江宁波315211

出　　处：《传感器与微系统》2017年第11期93-95,共3页Transducer and Microsystem Technologies

基　　金：国家自然科学基金资助项目(61571251;61501272);浙江省公益技术应用研究项目(2015C34004)

摘　　要：介绍了如何利用场效应管的小信号散射(S)参数设计射频功率放大器,并采用此设计方法,选用场效应管,设计了一种工作在160 MHz频段的金属氧化物半导体场效应管(MOSFET)功率放大器。在工作频段内,功率放大器增益大于23 d B,输入端口的匹配网络的回波损耗S11优于-19 d B。实例证明:该设计方法仿真简单,易于实现,具有重要的工程应用价值。In the actual design of radio frequency（ RF） power amplifier,the device manufacturers often provide only small-signal scattering（ S）-parameters and static I-V curve of a metal oxide semiconductor field effect transistor（ MOSFET） transistor. Introduce how to design an RF power amplifier with small signal S-parameters. A MOSFET power amplifier operated at 160 MHz is designed with this design method,where a FET transistor from Mitsubishi is selected. The gain of the power amplifier in the working frequency band is larger than 23 d B,and S11 of the input port is prior to-19 d B. The example illustrates that this design method is simple to simulation and easy to implement,which has great value in engineering application.

关 键 词：小信号 S参数 射频功率放大器 MOSFET 

分 类 号：TN722.7[电子电信—电路与系统]