一种基于忆阻器的忆容器模型  

Memcapacitor Model Based On Memristor

作　　者：甘朝晖[1] 吴宇鑫[1] 蒋旻[2] 张士英 Gan Zhaohui;Wu Yuxin;Jiang Min;Zhang Shiying(School of Information Science and Engineering, Wuhan University of Science and Technology, Wuhan 430081, China;School of Computer Science and Technology, Wuhan University of Science and Technology, Wuhan 430065, China)

机构地区：[1]武汉科技大学信息科学与工程学院,湖北武汉430081 [2]武汉科技大学计算机科学与技术学院,湖北武汉430065

出　　处：《系统仿真学报》2017年第12期3176-3184,共9页Journal of System Simulation

基　　金：国家自然科学基金(41571396)

摘　　要：惠普实验室在发现忆阻器实物以后,研究人员根据电路理论提出了忆容器的概念。但是,直到目前,忆容器的实物还没有被发现。为了研究忆容器,科研人员往往用其它的元件及电路来模拟忆容器。在详细分析了现有的忆容器模型以后,研究了忆阻器与忆容器之间的变换关系,提出了一种新的非线性转换方法以实现忆阻器到忆容器的变换,并在此基础上构造了一种基于忆阻器的非线性忆容器模型。经过Pspice仿真实验发现,该模型成功地模拟了忆容器的基本特性,该模型对忆容器及其相关电路的发展及应用是非常有意义的。After physical model discovery of memristor in HP lab, the researchers put forward the concept of memcapacitor according to circuit theory. However, the physical object of the memcapacitor has not been found so far. In order to research the memcapacitor, researchers often use other components and circuits to simulate a memcapacitor. After analyzing the existing model of memcapacitor, a new nonlinear transformation method is proposed to transform a memristor into a memcapacitor, by which a nonlinear model of memcapacitor based on the memristor is constructed. The Pspice simulation experiments showed that the model successfully simulated the basic characteristics of the memcapacitor, and the model is very meaningful for the development and application of the memcapacitor and its related circuits.

关 键 词：忆阻器 忆容器 非线性 模型 

分 类 号：TN710[电子电信—电路与系统]